| Deep ultraviolet emitting AlGaN quantum wells with high internal quantum efficiency A Bhattacharyya, TD Moustakas, L Zhou, DJ Smith, W Hug Applied Physics Letters 94 (18), 181907, 2009 | 178 | 2009 |
| Ultraviolet detection using TiO2 nanowire array with Ag Schottky contact P Chinnamuthu, JC Dhar, A Mondal, A Bhattacharyya, NK Singh Journal of Physics D: Applied Physics 45 (13), 135102, 2012 | 91 | 2012 |
| Ultrafast all-optical switching with low saturation energy via intersubband transitions in GaN/AlN quantum-well waveguides Y Li, A Bhattacharyya, C Thomidis, TD Moustakas, R Paiella Opt. Express 15 (26), 17922-17927, 2007 | 89 | 2007 |
| Efficient p-type doping of GaN films by plasma-assisted molecular beam epitaxy A Bhattacharyya, W Li, J Cabalu, TD Moustakas, DJ Smith, RL Hervig Applied physics letters 85 (21), 4956-4958, 2004 | 77 | 2004 |
| Measurements and modelling of the barrier heights and ideality factors in the metal/conducting polymer composite Schottky device S Bandyopadhyay, A Bhattacharyya, SK Sen Journal of applied physics 85 (7), 3671-3676, 1999 | 59 | 1999 |
| High reflectivity and crack-free AlGaN/AlN ultraviolet distributed Bragg reflectors A Bhattacharyya, S Iyer, E Iliopoulos, AV Sampath, J Cabalu, ... Journal of Vacuum Science & Technology B 20 (3), 1229-1233, 2002 | 54 | 2002 |
| Optically pumped intersubband emission of short-wave infrared radiation with GaN/AlN quantum wells K Driscoll, Y Liao, A Bhattacharyya, L Zhou, DJ Smith, TD Moustakas, ... Applied Physics Letters 94 (8), 081120, 2009 | 52 | 2009 |
| Intersubband absorption in AlN∕ GaN∕ AlGaN coupled quantum wells K Driscoll, A Bhattacharyya, TD Moustakas, R Paiella, L Zhou, DJ Smith Applied Physics Letters 91 (14), 141104, 2007 | 51 | 2007 |
| Nonlinear optical waveguides based on near-infrared intersubband transitions in GaN/AlN quantum wells Y Li, A Bhattacharyya, C Thomidis, TD Moustakas, R Paiella Optics express 15 (9), 5860-5865, 2007 | 49 | 2007 |
| Complex and incommensurate ordering in thin films grown by plasma-assisted molecular beam epitaxy Y Wang, AS Özcan, KF Ludwig Jr, A Bhattacharyya, TD Moustakas, ... Applied physics letters 88 (18), 181915, 2006 | 47 | 2006 |
| The role of liquid phase epitaxy during growth of AlGaN by MBE TD Moustakas, A Bhattacharyya physica status solidi (c) 9 (3‐4), 580-583, 2012 | 45 | 2012 |
| Mg and Al co-doping of ZnO thin films: Effect on ultraviolet photoconductivity A Das, PG Roy, A Dutta, S Sen, P Pramanik, D Das, A Banerjee, ... Materials Science in Semiconductor Processing 54, 36-41, 2016 | 44 | 2016 |
| Plasmon enhanced light emission from InGaN quantum wells via coupling to chemically synthesized silver nanoparticles J Henson, JC Heckel, E Dimakis, J Abell, A Bhattacharyya, G Chumanov, ... Applied Physics Letters 95 (15), 151109-151109-3, 2009 | 43 | 2009 |
| Enlarged Photodetection Using Nanowire Arrays A Mondal, NK Singh, P Chinnamuthu, JC Dhar, A Bhattacharyya, ... IEEE Photonics Technology Letters 24 (22), 2020-2023, 2012 | 41 | 2012 |
| Comparative study of GaN/AlGaN MQWs grown homoepitaxially on (1100) and (0001) GaN A Bhattacharyya, I Friel, S Iyer, TC Chen, W Li, J Cabalu, Y Fedyunin, ... Journal of crystal growth 251 (1), 487-493, 2003 | 38 | 2003 |
| Optical devices featuring nonpolar textured semiconductor layers TD Moustakas, A Moldawer, A Bhattacharyya, J Abell US Patent 8,592,800, 2013 | 32 | 2013 |
| Sequential tunneling transport characteristics of GaN/AlGaN coupled-quantum-well structures F Sudradjat, W Zhang, K Driscoll, Y Liao, A Bhattacharyya, C Thomidis, ... Journal of Applied Physics 108 (10), 103704, 2010 | 32 | 2010 |
| Controlling the recombination rate of semiconductor active layers via coupling to dispersion-engineered surface plasmons J Henson, A Bhattacharyya, TD Moustakas, R Paiella JOSA B 25 (8), 1328-1335, 2008 | 32 | 2008 |
| TiO2 nanoparticles arrays ultraviolet-A detector with Au Schottky contact S Acumen, A Mondal, M Sarkar, B Choudhuri, A Saha, A Bhattacharyya IEEE, 0 | 31* | |
| Experimental evidence that the plasma-assisted MBE growth of nitride alloys is a liquid phase epitaxy process TD Moustakas, A Bhattacharyya ECS Transactions 35 (6), 63-71, 2011 | 29 | 2011 |
Theodore D MoustakasBoston University, Electrical and Computer Engineering DepartmentVerified email at bu.edu
