Bo Soo Kang

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Tae Won NohCenter for Correlated Electron systems, Institute for Basic Science. Department of PhysicsVerified email at cces.mygbiz.com
Myoung-Jae LeeDaegu Gyeongubuk Institute of Science & Technology (DGIST)Verified email at dgist.ac.kr
Seung Eon AhnTech University of Korea (TU Korea)Verified email at tukorea.ac.kr
Bae Ho ParkProfessor of Department of Physics, Konkuk UniversityVerified email at konkuk.ac.kr
Jong-Gul YoonDepartment of Physics, University of SuwonVerified email at suwon.ac.kr
Shinbuhm LeeDGISTVerified email at dgist.ac.kr
Seo Hyoung ChangChung-Ang UniversityVerified email at cau.ac.kr
Quanxi JiaUniversity at Buffalo - The State University of New York; Los Alamos National Laboratory (former)Verified email at buffalo.edu
B KahngKorea Institute of Energy Technology, Seoul National University, Konkuk UniversityVerified email at snu.ac.kr
Dong-Jik KimHelmholtz-Zentrum BerlinVerified email at helmholtz-berlin.de
Dong-Wook KimProfessor of Physics Department, Ewha Womans University, Seoul 03760, KoreaVerified email at ewha.ac.kr
Ji-Hyun HurResearch Prof. @ Sejong Univ., CEO @ Hur Advanced Research (https://hurresearch.business.site, httpsVerified email at sejong.ac.kr
Michael NastasiTexas A&M UniversityVerified email at tamu.edu
Ranju JungKwangwoon UniversityVerified email at kw.ac.kr
Jang-Sik LeeProfessor of Materials Science and Engineering, Pohang University of Science and Technology (POSTECHVerified email at postech.ac.kr
Sang-Chul NaHanyang UniversityVerified email at hanyang.ac.kr
Hwang Inrok (I. Hwang)SK hynix (inrok.hwang@sk.com or hyperion9980@gmail.com)Verified email at sk.com
Jungdae KimProfessor, Department of Physics, University of Ulsan, KoreaVerified email at ulsan.ac.kr
Menka JainUniversity of ConnecticutVerified email at uconn.edu
Dae-Young JeonDepartment of Electrical Engineering, Gyeongsang National University, South KoreaVerified email at gnu.ac.kr

Bo Soo Kang

Professor, Department of Applied Physics, Hanyang University ERICA, KOREA

Verified email at hanyang.ac.kr

Oxide electronics Material Physics Device Physics


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Lanthanum-substituted bismuth titanate for use in non-volatile memories BH Park, BS Kang, SD Bu, TW Noh, J Lee, W Jo Nature 401 (6754), 682-684, 1999	2729	1999
Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory MJ Lee, S Han, SH Jeon, BH Park, BS Kang, SE Ahn, KH Kim, CB Lee, ... Nano letters 9 (4), 1476-1481, 2009	505	2009
Two series oxide resistors applicable to high speed and high density nonvolatile memory MJ Lee, Y Park, DS Suh, EH Lee, S Seo, DC Kim, R Jung, BS Kang, ... Advanced Materials 19 (22), 3919-3923, 2007	500	2007
Low‐temperature‐grown transition metal oxide based storage materials and oxide transistors for high‐density non‐volatile memory MJ Lee, SI Kim, CB Lee, H Yin, SE Ahn, BS Kang, KH Kim, JC Park, ... Advanced Functional Materials 19 (10), 1587-1593, 2009	281	2009
2-stack 1D-1R cross-point structure with oxide diodes as switch elements for high density resistance RAM applications MJ Lee, Y Park, BS Kang, SE Ahn, C Lee, K Kim, W Xianyu, G Stefanovich, ... 2007 IEEE International Electron Devices Meeting, 771-774, 2007	280	2007
Effects of metal electrodes on the resistive memory switching property of NiO thin films CB Lee, BS Kang, A Benayad, MJ Lee, SE Ahn, KH Kim, G Stefanovich, ... Applied Physics Letters 93 (4), 2008	232	2008
Write current reduction in transition metal oxide based resistance-change memory SE Ahn, MJ Lee, Y Park, BS Kang, CB Lee, KH Kim, S Seo, DS Suh, ... Advanced materials 20 (5), 924-928, 2008	194	2008
High-current-density CuOx/InZnOx thin-film diodes for cross-point memory applications BS Kang, SE Ahn, MJ Lee, G Stefanovich, KH Kim, WX Xianyu, CB Lee, ... Adv. Mater 20 (16), 3066-3069, 2008	149	2008
Oxide double‐layer nanocrossbar for ultrahigh‐density bipolar resistive memory SH Chang, SB Lee, DY Jeon, SJ Park, GT Kim, SM Yang, SC Chae, ... Advanced materials 23 (35), 4063, 2011	146	2011
Stack friendly all-oxide 3D RRAM using GaInZnO peripheral TFT realized over glass substrates MJ Lee, CB Lee, S Kim, H Yin, J Park, SE Ahn, BS Kang, KH Kim, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008	124	2008
Different fatigue behaviors of SrBi2Ta2O9 and Bi3TiTaO9 films: role of perovskite layers BS Kang, BH Park, SD Bu, SH Kang, TW Noh Applied Physics Letters 75 (17), 2644-2646, 1999	96	1999
Electromigration effect of Ni electrodes on the resistive switching characteristics of NiO thin films CB Lee, BS Kang, MJ Lee, SE Ahn, G Stefanovich, WX Xianyu, KH Kim, ... Applied Physics Letters 91 (8), 2007	92	2007
Resistive switching transition induced by a voltage pulse in a Pt/NiO/Pt structure I Hwang, MJ Lee, GH Buh, J Bae, J Choi, JS Kim, S Hong, YS Kim, ... Applied Physics Letters 97 (5), 2010	88	2010
Low field magnetotransport properties of (La0. 7Sr0. 3MnO3) 0.5:(ZnO) 0.5 nanocomposite films BS Kang, H Wang, JL MacManus-Driscoll, Y Li, QX Jia, I Mihut, JB Betts Applied physics letters 88 (19), 2006	88	2006
Scaling theory for unipolar resistance switching JS Lee, SB Lee, SH Chang, LG Gao, BS Kang, MJ Lee, CJ Kim, TW Noh, ... Physical review letters 105 (20), 205701, 2010	84	2010
Roles of the first atomic layers in growth of films on substrates DW Kim, DH Kim, BS Kang, TW Noh, DR Lee, KB Lee Applied physics letters 74 (15), 2176-2178, 1999	72	1999
Resistive random access memory C Lee, Y Park, M Lee, B Kang, S Ahn, K Kim US Patent App. 12/379,719, 2009	64	2009
Interface-modified random circuit breaker network model applicable to both bipolar and unipolar resistance switching SB Lee, JS Lee, SH Chang, HK Yoo, BS Kang, B Kahng, MJ Lee, CJ Kim, ... Applied Physics Letters 98 (3), 2011	63	2011
Large 1/f noise of unipolar resistance switching and its percolating nature SB Lee, S Park, JS Lee, SC Chae, SH Chang, MH Jung, Y Jo, B Kahng, ... Applied Physics Letters 95 (12), 2009	62	2009
Comparative structural and electrical analysis of NiO and Ti doped NiO as materials for resistance random access memory MJ Lee, Y Park, SE Ahn, BS Kang, CB Lee, KH Kim, WX Xianyu, IK Yoo, ... Journal of Applied Physics 103 (1), 2008	58	2008

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