| Auger lifetime enhancement in InAs–Ga1−xInxSb superlattices ER Youngdale, JR Meyer, CA Hoffman, FJ Bartoli, CH Grein, PM Young, ... Applied physics letters 64 (23), 3160-3162, 1994 | 441 | 1994 |
| Long wavelength InAs/InGaSb infrared detectors: Optimization of carrier lifetimes CH Grein, PM Young, ME Flatté, H Ehrenreich Journal of Applied Physics 78 (12), 7143-7152, 1995 | 290 | 1995 |
| Minority carrier lifetimes in ideal InGaSb/InAs superlattices CH Grein, PM Young, H Ehrenreich Applied physics letters 61 (24), 2905-2907, 1992 | 248 | 1992 |
| Theoretical performance of InAs/ InxGa1−xSb superlattice‐based midwave infrared lasers CH Grein, PM Young, H Ehrenreich Journal of Applied Physics 76 (3), 1940-1942, 1994 | 122 | 1994 |
| Auger recombination in narrow-gap semiconductor superlattices incorporating antimony CH Grein, ME Flatté, JT Olesberg, SA Anson, L Zhang, TF Boggess Journal of applied physics 92 (12), 7311-7316, 2002 | 112 | 2002 |
| Anharmonic decay time, isotopic scattering time, and inhomogeneous line broadening of optical phonons in Ge 70, Ge 76, and natural Ge crystals HD Fuchs, CH Grein, RI Devlen, J Kuhl, M Cardona Physical Review B 44 (16), 8633, 1991 | 107 | 1991 |
| Comparison of the phonon spectra of Ge 70 and natural Ge crystals: Effects of isotopic disorder HD Fuchs, CH Grein, C Thomsen, M Cardona, WL Hansen, EE Haller, ... Physical Review B 43 (6), 4835, 1991 | 105 | 1991 |
| Theoretical performance limits of 2.1–4.1 μm InAs/InGaSb, HgCdTe, and InGaAsSb lasers ME Flatté, CH Grein, H Ehrenreich, RH Miles, H Cruz Journal of applied physics 78 (7), 4552-4559, 1995 | 101 | 1995 |
| Theoretical performance of very long wavelength InAs/InxGa1−xSb superlattice based infrared detectors CH Grein, H Cruz, ME Flatte, H Ehrenreich Applied physics letters 65 (20), 2530-2532, 1994 | 96 | 1994 |
| Temperature dependence of the Urbach optical absorption edge: A theory of multiple phonon absorption and emission sidebands CH Grein, S John Physical Review B 39 (2), 1140, 1989 | 94 | 1989 |
| Carrier recombination rates in narrow-gap I n A s/G a 1− x In x Sb-based superlattices ME Flatté, CH Grein, TC Hasenberg, SA Anson, DJ Jang, JT Olesberg, ... Physical Review B 59 (8), 5745, 1999 | 90 | 1999 |
| Molecular beam epitaxy growth of high quantum efficiency InAs/GaSb superlattice detectors GJ Sullivan, A Ikhlassi, J Bergman, RE DeWames, JR Waldrop, C Grein, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2005 | 83 | 2005 |
| High efficiency multijunction II-VI photovoltaic solar cells S Sivananthan, WH Lau, C Grein, JW Garland US Patent 8,912,428, 2014 | 80 | 2014 |
| Piezo-optics of GaAs P Etchegoin, J Kircher, M Cardona, C Grein, E Bustarret Physical Review B 46 (23), 15139, 1992 | 71 | 1992 |
| Piezo-optical response of Ge in the visible–uv range P Etchegoin, J Kircher, M Cardona, C Grein Physical Review B 45 (20), 11721, 1992 | 71 | 1992 |
| Strained and unstrained layer superlattices for infrared detection CH Grein, J Garland, ME Flatté Journal of electronic materials 38, 1800-1804, 2009 | 66 | 2009 |
| MWIR imaging with low cost colloidal quantum dot films C Buurma, RE Pimpinella, AJ Ciani, JS Feldman, CH Grein, ... Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and …, 2016 | 65 | 2016 |
| Temperature dependence of Auger recombination in a multilayer narrow-band-gap superlattice DJ Jang, ME Flatté, CH Grein, JT Olesberg, TC Hasenberg, TF Boggess Physical Review B 58 (19), 13047, 1998 | 60 | 1998 |
| Carrier recombination dynamics in a (GaInSb/InAs)/AlGaSb superlattice multiple quantum well SW McCahon, SA Anson, DJ Jang, ME Flatté, TF Boggess, DH Chow, ... Applied physics letters 68 (15), 2135-2137, 1996 | 56 | 1996 |
| Defect characterization for epitaxial HgCdTe alloys by electron microscopy T Aoki, Y Chang, G Badano, J Zhao, C Grein, S Sivananthan, DJ Smith Journal of crystal growth 265 (1-2), 224-234, 2004 | 55 | 2004 |
