Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers SSP Parkin, C Kaiser, A Panchula, PM Rice, B Hughes, M Samant, ... Nature materials 3 (12), 862-867, 2004 | 4026 | 2004 |
Magnetically engineered spintronic sensors and memory S Parkin, X Jiang, C Kaiser, A Panchula, K Roche, M Samant Proceedings of the IEEE 91 (5), 661-680, 2003 | 905 | 2003 |
Thermodynamics of spin antiferromagnetic uniform and alternating-exchange Heisenberg chains DC Johnston, RK Kremer, M Troyer, X Wang, A Klümper, SL Bud’ko, ... Physical Review B 61 (14), 9558, 2000 | 610 | 2000 |
Spin-transfer torque switching in magnetic tunnel junctions and spin-transfer torque random access memory Z Diao, Z Li, S Wang, Y Ding, A Panchula, E Chen, LC Wang, Y Huai Journal of Physics: Condensed Matter 19 (16), 165209, 2007 | 559 | 2007 |
Spin transfer switching and spin polarization in magnetic tunnel junctions with MgO and AlOx barriers Z Diao, D Apalkov, M Pakala, Y Ding, A Panchula, Y Huai Applied Physics Letters 87 (23), 2005 | 294 | 2005 |
Oscillating-field assisted spin torque switching of a magnetic tunnel junction memory element A Panchula US Patent 7,224,601, 2007 | 280 | 2007 |
Spin transfer switching in dual MgO magnetic tunnel junctions Z Diao, A Panchula, Y Ding, M Pakala, S Wang, Z Li, D Apalkov, H Nagai, ... Applied Physics Letters 90 (13), 2007 | 232 | 2007 |
Current-switched spin-transfer magnetic devices with reduced spin-transfer switching current density Y Huai, Z Diao, A Panchula, EY Chen, LC Wang US Patent 7,430,135, 2008 | 220 | 2008 |
Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells having enhanced read and write margins EY Chen, Y Huai, AF Panchula, LC Wang, X Luo US Patent 7,379,327, 2008 | 174 | 2008 |
Magnetic and transport properties of single-grain R− M g− Z n icosahedral quasicrystals [R= Y,(Y 1− x Gd x),(Y 1− x Tb x), Tb, Dy, Ho, and Er] IR Fisher, KO Cheon, AF Panchula, PC Canfield, M Chernikov, HR Ott, ... Physical Review B 59 (1), 308, 1999 | 162 | 1999 |
Growth of large-grain R-Mg-Zn quasicrystals from the ternary melt (R= Y, Er, Ho, Dy and Tb) IR Fisher, Z Islam, AF Panchula, KO Cheon, MJ Kramer, PC Canfield, ... Philosophical Magazine B 77 (6), 1601-1615, 1998 | 127 | 1998 |
Finite Tunneling Spin Polarization at the Compensation Point<? format?> of Rare-Earth-Metal–Transition-Metal Alloys C Kaiser, AF Panchula, SSP Parkin Physical review letters 95 (4), 047202, 2005 | 108 | 2005 |
Nature of Electron Order in S Larochelle, A Mehta, N Kaneko, PK Mang, AF Panchula, L Zhou, ... Physical Review Letters 87 (9), 095502, 2001 | 101 | 2001 |
Magnetic response function of the itinerant ferromagnet L Paolasini, P Dervenagas, P Vulliet, JP Sanchez, GH Lander, A Hiess, ... Physical Review B 58 (18), 12117, 1998 | 78 | 1998 |
Spin-transfer switching in MgO-based magnetic tunnel junctions Z Diao, M Pakala, A Panchula, Y Ding, D Apalkov, LC Wang, E Chen, ... Journal of applied physics 99 (8), 2006 | 68* | 2006 |
Nat. Mater. SSP Parkin, C Kaiser, A Panchula, PM Rice, B Hughes, M Samant, ... Nat. Mater 3 (862), 2004 | 66 | 2004 |
Energy-yield prediction for II–VI-based thin-film tandem solar cells JP Mailoa, M Lee, IM Peters, T Buonassisi, A Panchula, DN Weiss Energy & Environmental Science 9 (8), 2644-2653, 2016 | 54 | 2016 |
Magnetic tunnel junctions with ZnSe barriers X Jiang, AF Panchula, SSP Parkin Applied physics letters 83 (25), 5244-5246, 2003 | 54 | 2003 |
Changes in cadmium telluride photovoltaic system performance due to spectrum L Nelson, M Frichtl, A Panchula IEEE Journal of Photovoltaics 3 (1), 488-493, 2012 | 48 | 2012 |
Structure, materials and shape optimization of magnetic tunnel junction devices: Spin-transfer switching current reduction for future magnetoresistive random access memory … Y Huai, D Apalkov, Z Diao, Y Ding, A Panchula, M Pakala, LC Wang, ... Japanese journal of applied physics 45 (5R), 3835, 2006 | 47 | 2006 |