Xiaotian Zhang
Xiaotian Zhang
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A roadmap for electronic grade 2D materials
N Briggs, S Subramanian, Z Lin, X Li, X Zhang, K Zhang, K Xiao, ...
2D Materials 6 (2), 022001, 2019
Diffusion-Controlled Epitaxy of Large Area Coalesced WSe2 Monolayers on Sapphire
X Zhang, TH Choudhury, M Chubarov, Y Xiang, B Jariwala, F Zhang, ...
Nano letters 18 (2), 1049-1056, 2018
Realizing large-scale, electronic-grade two-dimensional semiconductors
YC Lin, B Jariwala, BM Bersch, K Xu, Y Nie, B Wang, SM Eichfeld, ...
ACS nano 12 (2), 965-975, 2018
Defect-Controlled Nucleation and Orientation of WSe2 on hBN: A Route to Single-Crystal Epitaxial Monolayers
X Zhang, F Zhang, Y Wang, DS Schulman, T Zhang, A Bansal, N Alem, ...
ACS nano 13 (3), 3341-3352, 2019
Epitaxial growth of two-dimensional layered transition metal dichalcogenides
TH Choudhury, X Zhang, ZY Al Balushi, M Chubarov, JM Redwing
Annual Review of Materials Research 50, 155-177, 2020
Etchant-free transfer of 2D nanostructures
F Zhang, C Erb, L Runkle, X Zhang, N Alem
Nanotechnology 29 (2), 025602, 2017
Room‐Temperature Active Modulation of Valley Dynamics in a Monolayer Semiconductor through Chiral Purcell Effects
Z Wu, J Li, X Zhang, JM Redwing, Y Zheng
Advanced Materials 31 (49), 1904132, 2019
Influence of Carbon in Metalorganic Chemical Vapor Deposition of Few-Layer WSe2 Thin Films
X Zhang, ZY Al Balushi, F Zhang, TH Choudhury, SM Eichfeld, N Alem, ...
Journal of Electronic Materials 45 (12), 6273-6279, 2016
Defect creation in WSe 2 with a microsecond photoluminescence lifetime by focused ion beam irradiation
Q Qian, L Peng, N Perea-Lopez, K Fujisawa, K Zhang, X Zhang, ...
Nanoscale 12 (3), 2047-2056, 2020
In-plane x-ray diffraction for characterization of monolayer and few-layer transition metal dichalcogenide films
M Chubarov, TH Choudhury, X Zhang, JM Redwing
Nanotechnology 29 (5), 055706, 2018
Opportunities in electrically tunable 2D materials beyond graphene: Recent progress and future outlook
T Vincent, J Liang, S Singh, EG Castanon, X Zhang, A McCreary, ...
Applied Physics Reviews 8 (4), 041320, 2021
Hexagonal Boron Nitride Crystal Growth from Iron, a Single Component Flux
J Li, J Wang, X Zhang, C Elias, G Ye, D Evans, G Eda, JM Redwing, ...
ACS nano 15 (4), 7032-7039, 2021
Thin Film Transistors Using Wafer-Scale Low-Temperature MOCVD WSe2
Y Gong, X Zhang, JM Redwing, TN Jackson
Journal of Electronic Materials 45 (12), 6280-6284, 2016
Hexagonal boron nitride single crystal growth from solution with a temperature gradient
J Li, C Yuan, C Elias, J Wang, X Zhang, G Ye, C Huang, M Kuball, G Eda, ...
Chemistry of Materials 32 (12), 5066-5072, 2020
Epitaxial growth of few-layer β-In2Se3 thin films by metalorganic chemical vapor deposition
X Zhang, S Lee, A Bansal, F Zhang, M Terrones, TN Jackson, ...
Journal of Crystal Growth 533, 125471, 2020
Locally defined quantum emission from epitaxial few-layer tungsten diselenide
W Wu, CK Dass, JR Hendrickson, RD Montaņo, RE Fischer, X Zhang, ...
Applied Physics Letters 114 (21), 213102, 2019
Atomic layer deposition of ZnO on MoS2 and WSe2
TN Walter, S Lee, X Zhang, M Chubarov, JM Redwing, TN Jackson, ...
Applied Surface Science 480, 43-51, 2019
Modeling for Structural Engineering and Synthesis of Two-Dimensional WSe2 Using a Newly Developed ReaxFF Reactive Force Field
N Nayir, Y Wang, S Shabnam, DR Hickey, L Miao, X Zhang, S Bachu, ...
The Journal of Physical Chemistry C 124 (51), 28285-28297, 2020
Multi-wafer batch synthesis of graphene on Cu films by quasi-static flow chemical vapor deposition
B Huet, X Zhang, JM Redwing, DW Snyder, JP Raskin
2D Materials 6 (4), 045032, 2019
Synthesis, characterization and chemical stability of silicon dichalcogenides, Si(SexS1−x)2
C Chen, X Zhang, L Krishna, C Kendrick, SL Shang, E Toberer, ZK Liu, ...
Journal of Crystal Growth 452, 151-157, 2016
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