| Materials analysis by ion channeling: submicron crystallography LC Feldman, JW Mayer, STA Picraux Academic Press, 2012 | 1641 | 2012 |
| Materials analysis by ion channeling: submicron crystallography LC Feldman, JW Mayer, STA Picraux Academic Press, 2012 | 1641 | 2012 |
| Anisotropic swelling and fracture of silicon nanowires during lithiation XH Liu, H Zheng, L Zhong, S Huang, K Karki, LQ Zhang, Y Liu, A Kushima, ... Nano letters 11 (8), 3312-3318, 2011 | 798 | 2011 |
| In situ atomic-scale imaging of electrochemical lithiation in silicon XH Liu, JW Wang, S Huang, F Fan, X Huang, Y Liu, S Krylyuk, J Yoo, ... Nature nanotechnology 7 (11), 749-756, 2012 | 624 | 2012 |
| Ultrafast electrochemical lithiation of individual Si nanowire anodes XH Liu, LQ Zhang, L Zhong, Y Liu, H Zheng, JW Wang, JH Cho, ... Nano letters 11 (6), 2251-2258, 2011 | 457 | 2011 |
| Adaptable silicon–carbon nanocables sandwiched between reduced graphene oxide sheets as lithium ion battery anodes B Wang, X Li, X Zhang, B Luo, M Jin, M Liang, SA Dayeh, ST Picraux, ... ACS nano 7 (2), 1437-1445, 2013 | 446 | 2013 |
| Reversible nanopore formation in Ge nanowires during lithiation–delithiation cycling: An in situ transmission electron microscopy study XH Liu, S Huang, ST Picraux, J Li, T Zhu, JY Huang Nano letters 11 (9), 3991-3997, 2011 | 415 | 2011 |
| Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering JW Mayer, L Eriksson, ST Picraux, JA Davies Canadian Journal of Physics 46 (6), 663-673, 1968 | 366 | 1968 |
| Ion beams in silicon processing and characterization E Chason, ST Picraux, JM Poate, JO Borland, MI Current, ... Journal of applied physics 81 (10), 6513-6561, 1997 | 353 | 1997 |
| Epitaxial growth of rare‐earth silicides on (111) Si JA Knapp, ST Picraux Applied physics letters 48 (7), 466-468, 1986 | 327 | 1986 |
| Lotus effect amplifies light-induced contact angle switching R Rosario, D Gust, AA Garcia, M Hayes, JL Taraci, T Clement, JW Dailey, ... The Journal of Physical Chemistry B 108 (34), 12640-12642, 2004 | 294 | 2004 |
| Dependence of critical layer thickness on strain for InxGa1−xAs/GaAs strained‐layer superlattices IJ Fritz, ST Picraux, LR Dawson, TJ Drummond, WD Laidig, NG Anderson Applied physics letters 46 (10), 967-969, 1985 | 277 | 1985 |
| Are nanoporous materials radiation resistant? EM Bringa, JD Monk, A Caro, A Misra, L Zepeda-Ruiz, M Duchaineau, ... Nano letters 12 (7), 3351-3355, 2012 | 251 | 2012 |
| Critical Stresses for Strained-Layer Plasticity JY Tsao, BW Dodson, ST Picraux, DM Cornelison Physical review letters 59 (21), 2455, 1987 | 241 | 1987 |
| Formation of SiC in silicon by ion implantation JA Borders, ST Picraux, W Beezhold Applied Physics Letters 18 (11), 509-511, 1971 | 235 | 1971 |
| Role of integrated lateral stress in surface deformation of He‐implanted surfaces EP EerNisse, ST Picraux Journal of Applied Physics 48 (1), 9-17, 1977 | 230 | 1977 |
| Defect trapping of ion‐implanted deuterium in Fe SM Myers, ST Picraux, RE Stoltz Journal of Applied Physics 50 (9), 5710-5719, 1979 | 210 | 1979 |
| Precipitation and relaxation in strained Si1−yCy/Si heterostructures JW Strane, HJ Stein, SR Lee, ST Picraux, JK Watanabe, JW Mayer Journal of applied physics 76 (6), 3656-3668, 1994 | 179 | 1994 |
| Direct observation of nanoscale size effects in Ge semiconductor nanowire growth SA Dayeh, ST Picraux Nano letters 10 (10), 4032-4039, 2010 | 175 | 2010 |
| Metastable SiGeC formation by solid phase epitaxy JW Strane, HJ Stein, SR Lee, BL Doyle, ST Picraux, JW Mayer Applied physics letters 63 (20), 2786-2788, 1993 | 172 | 1993 |
Shadi A. DayehProfessor of Electrical and Computer Engineering, University of California San DiegoVerified email at eng.ucsd.edu
