Theodore D Moustakas
Theodore D Moustakas
Boston University, Electrical and Computer Engineering Department
Verified email at - Homepage
Cited by
Cited by
Scattering of electrons at threading dislocations in GaN
NG Weimann, LF Eastman, D Doppalapudi, HM Ng, TD Moustakas
Journal of Applied Physics 83 (7), 3656-3659, 1998
Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition
R Singh, D Doppalapudi, TD Moustakas, LT Romano
Applied Physics Letters 70 (9), 1089-1091, 1997
Epitaxial growth and characterization of zinc‐blende gallium nitride on (001) silicon
T Lei, TD Moustakas, RJ Graham, Y He, SJ Berkowitz
Journal of Applied Physics 71 (10), 4933-4943, 1992
The role of dislocation scattering in n-type GaN films
HM Ng, D Doppalapudi, TD Moustakas, NG Weimann, LF Eastman
Applied physics letters 73 (6), 821-823, 1998
Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon
T Lei, M Fanciulli, RJ Molnar, TD Moustakas, RJ Graham, J Scanlon
Applied physics letters 59 (8), 944-946, 1991
Metal contacts to gallium nitride
JS Foresi, TD Moustakas
Applied physics letters 62 (22), 2859-2861, 1993
Towards the identification of the dominant donor in GaN
P Perlin, T Suski, H Teisseyre, M Leszczynski, I Grzegory, J Jun, ...
Physical review letters 75 (2), 296, 1995
Heteroepitaxy, polymorphism, and faulting in GaN thin films on silicon and sapphire substrates
T Lei, KF Ludwig Jr, TD Moustakas
Journal of applied physics 74 (7), 4430-4437, 1993
Growth of GaN by ECR-assisted MBE
TD Moustakas, T Lei, RJ Molnar
Physica B: Condensed Matter 185 (1-4), 36-49, 1993
Phase separation and ordering in InGaN alloys grown by molecular beam epitaxy
D Doppalapudi, SN Basu, KF Ludwig Jr, TD Moustakas
Journal of applied physics 84 (3), 1389-1395, 1998
Optical Devices Featuring textured semiconductor layers
JSC TD Moustakas
US Patent 8,035,113, 2011
Gallium Nitride (GaN)
JI Pankove, TD Moustakas
(No Title), 1998
Doping, Schottky barrier and p n junction formation in amorphous germanium and silicon by rf sputtering
W Paul, AJ Lewis, GAN Connell, TD Moustakas
Solid State Communications 20 (10), 969-972, 1976
Thermal expansion of gallium nitride
M Leszczynski, T Suski, H Teisseyre, P Perlin, I Grzegory, J Jun, ...
Journal of applied physics 76 (8), 4909-4911, 1994
Mechanism of yellow luminescence in GaN
T Suski, P Perlin, H Teisseyre, M Leszczyński, I Grzegory, J Jun, ...
Applied physics letters 67 (15), 2188-2190, 1995
Effect of nitrogen on the growth of diamond films
S Jin, TD Moustakas
Applied Physics Letters 65 (4), 403-405, 1994
Temperature dependence of the energy gap in GaN bulk single crystals and epitaxial layer
H Teisseyre, P Perlin, T Suski, I Grzegory, S Porowski, J Jun, A Pietraszko, ...
Journal of Applied Physics 76 (4), 2429-2434, 1994
Growth of gallium nitride by electron‐cyclotron resonance plasma‐assisted molecular‐beam epitaxy: The role of charged species
RJ Molnar, TD Moustakas
Journal of Applied Physics 76 (8), 4587-4595, 1994
Electron transport mechanism in gallium nitride
RJ Molnar, T Lei, TD Moustakas
Applied physics letters 62 (1), 72-74, 1993
Blue‐violet light emitting gallium nitride p‐n junctions grown by electron cyclotron resonance‐assisted molecular beam epitaxy
RJ Molnar, R Singh, TD Moustakas
Applied physics letters 66 (3), 268-270, 1995
The system can't perform the operation now. Try again later.
Articles 1–20