Zakaria Y. Al Balushi
Zakaria Y. Al Balushi
Asst. Professor of MSE at UC Berkeley, LBNL, California Institute of Technology, Penn State
Verified email at - Homepage
Cited by
Cited by
Two-dimensional gallium nitride realized via graphene encapsulation
ZY Al Balushi, K Wang, RK Ghosh, RA Vilá, SM Eichfeld, JD Caldwell, ...
Nature Materials 15, 1166–1171, 2016
The impact of graphene properties on GaN and AlN nucleation
ZY Al Balushi, T Miyagi, YC Lin, K Wang, L Calderin, G Bhimanapati, ...
Surface Science 634, 81-88, 2015
Epitaxial growth of two-dimensional layered transition metal dichalcogenides
TH Choudhury, X Zhang, ZY Al Balushi, M Chubarov, JM Redwing
Annual Review of Materials Research 50 (1), 155-177, 2020
Influence of Carbon in Metalorganic Chemical Vapor Deposition of Few-Layer WSe2 Thin Films
X Zhang, ZY Al Balushi, F Zhang, TH Choudhury, SM Eichfeld, N Alem, ...
Journal of Electronic Materials, 1-7, 2016
An outlook into the flat land of 2D materials beyond graphene: synthesis, properties and device applications
A McCreary, O Kazakova, D Jariwala, ZY Al Balushi
2D Materials 8 (1), 013001, 2020
Opportunities in Electrically Tunable 2D Materials Beyond Graphene: Recent Progress and Future Outlook
T Vincent, J Liang, S Singh, EG Castanon, X Zhang, A McCreary, ...
Applied Physics Reviews 8, 041320, 2021
All-silicon quantum light source by embedding an atomic emissive center in a nanophotonic cavity
W Redjem, Y Zhiyenbayev, W Qarony, V Ivanov, C Papapanos, W Liu, ...
Nature communications 14 (1), 3321, 2023
Growth of Ge Nanowires from Au− Cu Alloy Nanoparticle Catalysts Synthesized from Aqueous Solution
JG Connell, ZY Al Balushi, K Sohn, J Huang, LJ Lauhon
The Journal of Physical Chemistry Letters 1 (23), 3360-3365, 2010
Impact of binder functional groups on controlling chemical reactions to improve stability of rechargeable zinc-ion batteries
N Jaikrajang, W Kao-Ian, T Muramatsu, R Chanajaree, T Yonezawa, ...
ACS Applied Energy Materials 4 (7), 7138-7147, 2021
Effect of substrate on the growth and properties of thin 3R NbS2 films grown by chemical vapor deposition
A Kozhakhmetov, TH Choudhury, ZY Al Balushi, M Chubarov, ...
Journal of Crystal Growth 486, 137-141, 2018
The effect of polarity on MOCVD growth of thick InGaN
ZY Al Balushi, JM Redwing
Applied Physics Letters 110 (2), 022101, 2017
Influence of growth stress on the surface morphology of N-polar GaN films grown on vicinal C-face SiC substrates
D Won, X Weng, ZY Al Balushi, JM Redwing
Applied Physics Letters 103 (24), 2013
Rydberg Excitons and Trions in Monolayer MoTe2
S Biswas, A Champagne, JB Haber, S Pokawanvit, J Wong, H Akbari, ...
ACS nano 17 (8), 7685-7694, 2023
Band edge tailoring in few-layer two-dimensional molybdenum sulfide/selenide alloys
YR Lin, WH Cheng, MH Richter, JS DuChene, EA Peterson, CM Went, ...
The Journal of Physical Chemistry C 124 (42), 22893-22902, 2020
Al Balushi, Ke Wang, Ram Krishna Ghosh, Rafael A
Y Zakaria
Vila, Sarah M. Eichfeld, Joshua D. Caldwell, Xiaoye Qin, Yu-Chuan Lin, Paul …, 2016
In situ stress measurements during direct MOCVD growth of GaN on SiC
ZY Al Balushi, JM Redwing
Journal of Materials Research 30 (19), 2900-2909, 2015
Heteroepitaxy of Highly Oriented GaN Films on Non‐Single Crystal Substrates Using a Si (111) Template Layer Formed by Aluminum‐Induced Crystallization
MF Hainey Jr, ZY Al Balushi, K Wang, NC Martin, A Bansal, M Chubarov, ...
physica status solidi (RRL)–Rapid Research Letters 12 (3), 1700392, 2018
In situ stress measurements during MOCVD growth of thick N-polar InGaN
ZY Al Balushi, JM Redwing
Journal of Applied Physics 122 (8), 2017
Elucidating the mechanism of large phosphate molecule intercalation through graphene-substrate Heterointerfaces
J Liang, K Ma, X Zhao, G Lu, J Riffle, CM Andrei, C Dong, T Furkan, ...
ACS Applied Materials & Interfaces 15 (40), 47649-47660, 2023
Van der Waals epitaxy and composition control of layered SnSxSe2− x alloy thin films
JJ Fox, X Zhang, ZY Al Balushi, M Chubarov, A Kozhakhmetov, ...
Journal of Materials Research 35 (11), 1386-1396, 2020
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