| Controlling short-channel effects in deep-submicron SOI MOSFETs for improved reliability: a review A Chaudhry, MJ Kumar IEEE Transactions on Device and Materials Reliability 4 (1), 99-109, 2004 | 556 | 2004 |
| Two-dimensional analytical modeling of fully depleted DMG SOI MOSFET and evidence for diminished SCEs MJ Kumar, A Chaudhry IEEE Transactions on Electron Devices 51 (4), 569-574, 2004 | 336 | 2004 |
| Investigation of the novel attributes of a fully depleted dual-material gate SOI MOSFET A Chaudhry, MJ Kumar IEEE Transactions on Electron Devices 51 (9), 1463-1467, 2004 | 163 | 2004 |
| First-principles study of luminescence in Ce-doped inorganic scintillators A Canning, A Chaudhry, R Boutchko, N Grønbech-Jensen Physical Review B—Condensed Matter and Materials Physics 83 (12), 125115, 2011 | 159 | 2011 |
| Field programmable logic device with efficient memory utilization M Singh, A Chaudhry US Patent 6,788,104, 2004 | 139 | 2004 |
| Eu2+-doped Ba2CsI5, a new high-performance scintillator ED Bourret-Courchesne, G Bizarri, R Borade, Z Yan, SM Hanrahan, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2009 | 136 | 2009 |
| First-principles study of luminescence in Eu2+-doped inorganic scintillators A Chaudhry, R Boutchko, S Chourou, G Zhang, N Grønbech-Jensen, ... PHYSICAL REVIEW B 89, 155105, 2014 | 105 | 2014 |
| Ultra-low contact resistance of epitaxially interfaced bridged silicon nanowires A Chaudhry, V Ramamurthi, E Fong, MS Islam Nano letters 7 (6), 1536-1541, 2007 | 84 | 2007 |
| New scintillators discovered by high-throughput screening S Derenzo, G Bizarri, R Borade, E Bourret-Courchesne, R Boutchko, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2011 | 61 | 2011 |
| Spin logic with spin hall electrodes and charge interconnects S Manipatruni, DE Nikonov, A Chaudhry, IA Young US Patent 10,679,782, 2020 | 56 | 2020 |
| First-principles studies of Ce-doped RE2M2O7 (RE= Y, La; M= Ti, Zr, Hf): A class of nonscintillators A Chaudhry, A Canning, R Boutchko, MJ Weber, N Grønbech-Jensen, ... Journal of Applied Physics 109 (8), 2011 | 45 | 2011 |
| Luminescence study of cerium-doped La2Hf2O7: Effects due to trivalent and tetravalent cerium and oxygen vacancies Y Eagleman, M Weber, A Chaudhry, S Derenzo Journal of luminescence 132 (11), 2889-2896, 2012 | 37 | 2012 |
| Scintillation properties of Eu2+-activated barium fluoroiodide G Gundiah, E Bourret-Courchesne, G Bizarri, SM Hanrahan, A Chaudhry, ... 2009 IEEE Nuclear Science Symposium Conference Record (NSS/MIC), 1575-1578, 2009 | 33 | 2009 |
| Tunneling field effect transistors (TFETs) for CMOS approaches to fabricating N-type and P-type TFETs R Kotlyar, SM Cea, G Dewey, B Chu-Kung, UE Avci, R Rios, A Chaudhry, ... US Patent 8,890,120, 2014 | 32 | 2014 |
| Dose radiation effects in FinFETs X Wu, PCH Chan, A Orozco, A Vazquez, A Chaudhry, JP Colinge Solid-state electronics 50 (2), 287-290, 2006 | 29 | 2006 |
| First-principles studies and predictions of scintillation in Ce-doped materials A Canning, R Boutchko, A Chaudhry, SE Derenzo IEEE Transactions on Nuclear Science 56 (3), 944-948, 2009 | 27 | 2009 |
| Perpendicular Spin Transfer Torque Memory (STTM) Device with Coupled Free Magnetic Layers CC Kuo, K Oguz, ML Doczy, BS Doyle, S Suri, RS Chau, DL Kencke, ... US Patent App. 14/039,668, 2015 | 23 | 2015 |
| Process modeling for advanced device technologies SM Cea, S Botelho, A Chaudhry, P Fleischmann, MD Giles, A Grigoriev, ... Journal of Computational Electronics 13, 18-32, 2014 | 20 | 2014 |
| Fin thickness asymmetry effects in multiple-gate SOI FETs (MuGFETs) T Schulz, W Xiong, CR Cleavelin, K Schruefer, M Gostkowski, K Matthews, ... 2005 IEEE International SOI Conference Proceedings, 154-156, 2005 | 19 | 2005 |
| Cerium activated scintillation in yttrium halides: First principles theory and prediction R Boutchko, A Canning, A Chaudhry, R Borade, E Bourret-Courchesne, ... IEEE Transactions on Nuclear Science 56 (3), 977-981, 2009 | 17 | 2009 |
