Sonu Hooda
Cited by
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Charge disproportionate molecular redox for discrete memristive and memcapacitive switching
S Goswami, SP Rath, D Thompson, S Hedström, M Annamalai, ...
Nature nanotechnology 15 (5), 380-389, 2020
Reversible hydrogen control of antiferromagnetic anisotropy in α-Fe2O3
H Jani, J Linghu, S Hooda, RV Chopdekar, C Li, GJ Omar, S Prakash, ...
Nature communications 12 (1), 1668, 2021
Tunable and enhanced Rashba spin-orbit coupling in iridate-manganite heterostructures
TS Suraj, GJ Omar, H Jani, MM Juvaid, S Hooda, A Chaudhuri, A Rusydi, ...
Physical Review B 102 (12), 125145, 2020
Direct growth of wafer-scale, transparent, p-type reduced-graphene-oxide-like thin films by pulsed laser deposition
MM Juvaid, S Sarkar, PK Gogoi, S Ghosh, M Annamalai, YC Lin, ...
ACS nano 14 (3), 3290-3298, 2020
Role of ion beam induced solid flow in surface patterning of Si (1 0 0) using Ar ion beam irradiation
T Kumar, A Kumar, NP Lalla, S Hooda, S Ojha, S Verma, D Kanjilal
Applied surface science 283, 417-421, 2013
Anatase TiO2—A Model System for Large Polaron Transport
B Yan, D Wan, X Chi, C Li, MR Motapothula, S Hooda, P Yang, Z Huang, ...
ACS applied materials & interfaces 10 (44), 38201-38208, 2018
Reconfigurable nonlinear photonic activation function for photonic neural network based on non-volatile opto-resistive RAM switch
Z Xu, B Tang, X Zhang, JF Leong, J Pan, S Hooda, E Zamburg, ...
Light: Science & Applications 11 (1), 288, 2022
Stress-memorized HZO for high-performance ferroelectric field-effect memtransistor
SH Tsai, Z Fang, X Wang, U Chand, CK Chen, S Hooda, M Sivan, J Pan, ...
ACS Applied Electronic Materials 4 (4), 1642-1650, 2022
Structural manipulation in Ge by swift heavy ions governed by electron–phonon coupling strength
S Hooda, B Satpati, S Ojha, T Kumar, D Kanjilal, D Kabiraj
Materials Research Express 2 (4), 045903, 2015
Nanopores formation and shape evolution in Ge during intense ionizing irradiation
S Hooda, SA Khan, B Satpati, A Uedono, S Sellaiyan, K Asokan, ...
Microporous and Mesoporous Materials 225, 323-330, 2016
Effect of ion beam parameters on engineering of nanoscale voids and their stability under post-growth annealing
S Hooda, SA Khan, B Satpati, D Stange, D Buca, M Bala, C Pannu, ...
Applied Physics A 122, 1-7, 2016
Experimental Evidence of Electron-Gas Rashba Interaction Induced by Asymmetric Orbital Hybridization
GJ Omar, WL Kong, H Jani, MS Li, J Zhou, ZS Lim, S Prakash, SW Zeng, ...
Physical Review Letters 129 (18), 187203, 2022
Ion beam induced optical and surface modification in plasmonic nanostructures
UB Singh, SK Gautam, S Kumar, S Hooda, S Ojha, F Singh
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2016
Mechanistic details of the formation and growth of nanoscale voids in Ge under extreme conditions within an ion track
S Hooda, K Avchachov, SA Khan, F Djurabekova, K Nordlund, B Satpati, ...
Journal of Physics D: Applied Physics 50 (22), 225302, 2017
Swift heavy ion induced structural evolution in InP
S Mishra, S Hooda, D Kabiraj, A Roy
Vacuum 119, 136-144, 2015
Overcoming Negative nFET VTH by Defect-Compensated Low-Thermal Budget ITO-IGZO Hetero-Oxide Channel to Achieve Record Mobility and Enhancement …
S Hooda, CK Chen, M Lal, SH Tsai, E Zamburg, AVY Thean
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023
First Demonstration of Ultra-low Dit Top-Gated Ferroelectric Oxide-Semiconductor Memtransistor with Record Performance by Channel Defect Self-Compensation …
CK Chen, Z Fang, S Hooda, M Lal, U Chand, Z Xu, J Pan, SH Tsai, ...
2022 International Electron Devices Meeting (IEDM), 6.1. 1-6.1. 4, 2022
Regrowth of Ge with different degrees of damage under thermal and athermal treatment
S Hooda, B Satpati, T Kumar, S Ojha, D Kanjilal, D Kabiraj
RSC advances 6 (6), 4576-4586, 2016
Sub-10nm Ultra-thin ZnO Channel FET with Record-High 561 µA/µm ION at VDS 1V, High µ-84 cm2/V-s and1T-1RRAM Memory Cell Demonstration Memory …
U Chand, MMS Aly, M Lal, C Chun-Kuei, S Hooda, SH Tsai, Z Fang, ...
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022
Low-thermal-budget beol-compatible beyond-silicon transistor technologies for future monolithic-3d compute and memory applications
A Thean, SH Tsai, CK Chen, M Sivan, B Tang, S Hooda, Z Fang, J Pan, ...
2022 International Electron Devices Meeting (IEDM), 12.2. 1-12.2. 4, 2022
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