| Structural and electrical properties of silicon dioxide layers with embedded germanium nanocrystals grown by molecular beam epitaxy A Kanjilal, JL Hansen, P Gaiduk, AN Larsen, N Cherkashin, A Claverie, ... Applied Physics Letters 82 (8), 1212-1214, 2003 | 162 | 2003 |
| Manipulation of two-dimensional arrays of Si nanocrystals embedded in thin layers by low energy ion implantation C Bonafos, M Carrada, N Cherkashin, H Coffin, D Chassaing, ... Journal of applied physics 95 (10), 5696-5702, 2004 | 152 | 2004 |
| Effect of annealing environment on the memory properties of thin oxides with embedded Si nanocrystals obtained by low-energy ion-beam synthesis P Normand, E Kapetanakis, P Dimitrakis, D Tsoukalas, K Beltsios, ... Applied Physics Letters 83 (1), 168-170, 2003 | 141 | 2003 |
| Epitaxial growth of Ge thick layers on nominal and 6 off Si (0 0 1); Ge surface passivation by Si JM Hartmann, A Abbadie, N Cherkashin, H Grampeix, L Clavelier Semiconductor Science and Technology 24 (5), 055002, 2009 | 117 | 2009 |
| Imaging Si nanoparticles embedded in SiO2 layers by (S) TEM-EELS S Schamm, C Bonafos, H Coffin, N Cherkashin, M Carrada, GB Assayag, ... Ultramicroscopy 108 (4), 346-357, 2008 | 103 | 2008 |
| Clusters formation in ultralow-energy high-dose boron-implanted silicon F Cristiano, X Hebras, N Cherkashin, A Claverie, W Lerch, S Paul Applied physics letters 83 (26), 5407-5409, 2003 | 79 | 2003 |
| Amorphization, recrystallization and end of range defects in germanium A Claverie, S Koffel, N Cherkashin, G Benassayag, P Scheiblin Thin Solid Films 518 (9), 2307-2313, 2010 | 68 | 2010 |
| Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications P Normand, E Kapetanakis, P Dimitrakis, D Skarlatos, K Beltsios, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2004 | 68 | 2004 |
| Impact of the transient formation of molecular hydrogen on the microcrack nucleation and evolution in H-implanted Si (001) S Personnic, KK Bourdelle, F Letertre, A Tauzin, N Cherkashin, A Claverie, ... Journal of Applied Physics 103 (2), 2008 | 66 | 2008 |
| Oxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin SiO2 layers H Coffin, C Bonafos, S Schamm, N Cherkashin, GB Assayag, A Claverie, ... Journal of applied physics 99 (4), 2006 | 66 | 2006 |
| Multi-dot floating-gates for nonvolatile semiconductor memories: Their ion beam synthesis and morphology T Müller, KH Heinig, W Möller, C Bonafos, H Coffin, N Cherkashin, ... Applied physics letters 85 (12), 2373-2375, 2004 | 62 | 2004 |
| Modeling and experiments on diffusion and activation of phosphorus in germanium P Tsouroutas, D Tsoukalas, I Zergioti, N Cherkashin, A Claverie Journal of Applied Physics 105 (9), 2009 | 58 | 2009 |
| Ion beam induced defects in crystalline silicon F Cristiano, N Cherkashin, X Hebras, P Calvo, Y Lamrani, E Scheid, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2004 | 58 | 2004 |
| Strained Si and Ge MOSFETs with high-k/metal gate stack for high mobility dual channel CMOS O Weber, Y Bogumilowicz, T Ernst, JM Hartmann, F Ducroquet, F Andrieu, ... IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005 | 56 | 2005 |
| End of range defects in Ge S Koffel, N Cherkashin, F Houdellier, MJ Hytch, G Benassayag, ... Journal of Applied Physics 105 (12), 2009 | 54 | 2009 |
| High germanium content SiGe virtual substrates grown at high temperatures Y Bogumilowicz, JM Hartmann, F Laugier, G Rolland, T Billon, ... Journal of crystal growth 283 (3-4), 346-355, 2005 | 53 | 2005 |
| Extended defects formation in nanosecond laser-annealed ion implanted silicon Y Qiu, F Cristiano, K Huet, F Mazzamuto, G Fisicaro, A La Magna, ... Nano letters 14 (4), 1769-1775, 2014 | 48 | 2014 |
| X-ray determination of threading dislocation densities in GaN/Al2O3 (0001) films grown by metalorganic vapor phase epitaxy VS Kopp, VM Kaganer, MV Baidakova, WV Lundin, AE Nikolaev, ... journal of Applied Physics 115 (7), 2014 | 48 | 2014 |
| Thermal stability of boron electrical activation in preamorphised ultra-shallow junctions F Cristiano, N Cherkashin, P Calvo, Y Lamrani, X Hebras, A Claverie, ... Materials Science and Engineering: B 114, 174-179, 2004 | 47 | 2004 |
| Si nanocrystals by ultra-low-energy ion beam-synthesis for non-volatile memory applications C Bonafos, H Coffin, S Schamm, N Cherkashin, GB Assayag, P Dimitrakis, ... Solid-State Electronics 49 (11), 1734-1744, 2005 | 46 | 2005 |
