| Compositional dependence of the direct and indirect band gaps in Ge1− ySny alloys from room temperature photoluminescence: implications for the indirect to direct gap crossover … L Jiang, JD Gallagher, CL Senaratne, T Aoki, J Mathews, J Kouvetakis, ... Semiconductor Science and Technology 29 (11), 115028, 2014 | 124 | 2014 |
| Compositional dependence of the bowing parameter for the direct and indirect band gaps in Ge1− ySny alloys JD Gallagher, CL Senaratne, J Kouvetakis, J Menendez Applied Physics Letters 105 (14), 2014 | 106 | 2014 |
| Electroluminescence from GeSn heterostructure pin diodes at the indirect to direct transition JD Gallagher, CL Senaratne, P Sims, T Aoki, J Menendez, J Kouvetakis Applied Physics Letters 106 (9), 2015 | 72 | 2015 |
| Advances in light emission from group-IV alloys via lattice engineering and n-type doping based on custom-designed chemistries CL Senaratne, JD Gallagher, T Aoki, J Kouvetakis, J Menendez Chemistry of Materials 26 (20), 6033-6041, 2014 | 68 | 2014 |
| Ge1-ySny (y= 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties CL Senaratne, JD Gallagher, L Jiang, T Aoki, DJ Smith, J Menendez, ... Journal of Applied Physics 116 (13), 2014 | 54 | 2014 |
| Direct gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes CL Senaratne, PM Wallace, JD Gallagher, PE Sims, J Kouvetakis, ... Journal of Applied Physics 120 (2), 2016 | 50 | 2016 |
| Deviations from Vegard's law in semiconductor thin films measured with X-ray diffraction and Rutherford backscattering: The Ge1-ySny and Ge1-xSix cases C Xu, CL Senaratne, RJ Culbertson, J Kouvetakis, J Menéndez Journal of Applied Physics 122 (12), 2017 | 49 | 2017 |
| Experimental doping dependence of the lattice parameter in -type Ge: Identifying the correct theoretical framework by comparison with Si C Xu, CL Senaratne, J Kouvetakis, J Menendez Physical Review B 93 (4), 041201, 2016 | 40 | 2016 |
| Non-radiative recombination in Ge1− ySny light emitting diodes: The role of strain relaxation in tuned heterostructure designs JD Gallagher, CL Senaratne, C Xu, P Sims, T Aoki, DJ Smith, J Menendez, ... Journal of Applied Physics 117 (24), 2015 | 37 | 2015 |
| Ge1− x− ySixSny light emitting diodes on silicon for mid-infrared photonic applications JD Gallagher, C Xu, CL Senaratne, T Aoki, PM Wallace, J Kouvetakis, ... Journal of Applied Physics 118 (13), 2015 | 30 | 2015 |
| Frustrated incomplete donor ionization in ultra-low resistivity germanium films C Xu, CL Senaratne, J Kouvetakis, J Menendez Applied Physics Letters 105 (23), 2014 | 30 | 2014 |
| Direct bandgap cross-over point of Ge1-ySny grown on Si estimated through temperature-dependent photoluminescence studies TR Harris, MY Ryu, YK Yeo, B Wang, CL Senaratne, J Kouvetakis Journal of Applied Physics 120 (8), 2016 | 28 | 2016 |
| Compositional dependence of optical interband transition energies in GeSn and GeSiSn alloys C Xu, CL Senaratne, J Kouvetakis, J Menéndez Solid-State Electronics 110, 76-82, 2015 | 24 | 2015 |
| Band gap-engineered group-IV optoelectronic semiconductors, photodiodes and prototype photovoltaic devices RT Beeler, J Gallagher, C Xu, L Jiang, CL Senaratne, DJ Smith, ... ECS Journal of Solid State Science and Technology 2 (9), Q172, 2013 | 24 | 2013 |
| Molecular epitaxy of pseudomorphic Ge1− ySny (y= 0.06–0.17) structures and devices on Si/Ge at ultra-low temperatures via reactions of Ge4H10 and SnD4 PM Wallace, CL Senaratne, C Xu, PE Sims, J Kouvetakis, J Menendez Semiconductor Science and Technology 32 (2), 025003, 2017 | 17 | 2017 |
| Electroluminescence from Ge1− ySny diodes with degenerate pn junctions JD Gallagher, CL Senaratne, PM Wallace, J Menendez, J Kouvetakis Applied Physics Letters 107 (12), 2015 | 17 | 2015 |
| Ultralow Resistivity Ge: Sb heterostructures on Si Using Hydride Epitaxy of Deuterated Stibine and Trigermane C Xu, CL Senaratne, P Sims, J Kouvetakis, J Menendez ACS Applied Materials & Interfaces 8 (36), 23810-23819, 2016 | 16 | 2016 |
| Optical properties of Ge-rich alloys: Compositional dependence of the lowest direct and indirect gaps C Xu, JD Gallagher, CL Senaratne, J Menendez, J Kouvetakis Physical Review B 93 (12), 125206, 2016 | 16 | 2016 |
| In situ low temperature As-doping of Ge films using As (SiH3) 3 and As (GeH3) 3: fundamental properties and device prototypes C Xu, JD Gallagher, PM Wallace, CL Senaratne, P Sims, J Menendez, ... Semiconductor Science and Technology 30 (10), 105028, 2015 | 16 | 2015 |
| Materials physics of GeSn-based semiconductor lasers J Menendez, PM Wallace, C Xu, CL Senaratne, JD Gallagher, ... Materials Today: Proceedings 14, 38-42, 2019 | 12 | 2019 |
John KouvetakisArizona State UniversityVerified email at asu.edu
