| Temperature varying photoconductivity of GeSn alloys grown by chemical vapor deposition with Sn concentrations from 4% to 11% J Hart, T Adam, Y Kim, YC Huang, A Reznicek, R Hazbun, J Gupta, ... Journal of Applied Physics 119 (9), 2016 | 29 | 2016 |
| Silicon epitaxy using tetrasilane at low temperatures in ultra-high vacuum chemical vapor deposition R Hazbun, J Hart, R Hickey, A Ghosh, N Fernando, S Zollner, TN Adam, ... Journal of Crystal Growth 444, 21-27, 2016 | 27 | 2016 |
| Properties of pseudomorphic and relaxed germanium1− xtinx alloys (x< 0.185) grown by MBE R Hickey, N Fernando, S Zollner, J Hart, R Hazbun, J Kolodzey Journal of Vacuum Science & Technology B 35 (2), 2017 | 26 | 2017 |
| Tetrasilane and digermane for the ultra-high vacuum chemical vapor deposition of SiGe alloys J Hart, R Hazbun, D Eldridge, R Hickey, N Fernando, T Adam, S Zollner, ... Thin Solid Films 604, 23-27, 2016 | 24 | 2016 |
| In situ tunable factor for a single electron confined inside an InAs quantum dot molecule W Liu, S Sanwlani, R Hazbun, J Kolodzey, AS Bracker, D Gammon, ... Physical Review B 84 (12), 121304, 2011 | 22 | 2011 |
| Band gap and strain engineering of pseudomorphic Ge1− x− ySixSny alloys on Ge and GaAs for photonic applications NS Fernando, RA Carrasco, R Hickey, J Hart, R Hazbun, S Schoeche, ... Journal of Vacuum Science & Technology B 36 (2), 2018 | 17 | 2018 |
| Morphological instability of high Ge percent SiGe films grown by ultra-high vacuum chemical vapor deposition J Hart, R Hazbun, J Nakos, D Siegel, C Funch, J Kolodzey, DL Harame ECS Transactions 64 (6), 659, 2014 | 7 | 2014 |
| The Use of Dopants for Defect Monitoring for Silicon-Germanium Ultra-High Vaccuum Chemical Vapor Deposition R Hazbun, J Hart, J Nakos, D Siegel, C Funch, V Kaushal, DS Hazel, ... ECS Transactions 64 (6), 441, 2014 | 3 | 2014 |
| The characteristics of GeSn pn junction devices fabricated by molecular beam epitaxy J Kolodzey, R Hazbun, J Hart, R Hickey, D Zhang, D Eldridge 2016 IEEE Photonics Society Summer Topical Meeting Series (SUM), 1-2, 2016 | 2 | 2016 |
| Theoretical study of the effects of strain balancing on the bandgap of dilute nitride InGaSbN/InAs superlattices on GaSb substrates R Hazbun, N Bhargava, VA Rodriguez-Toro, K Goossen, J Kolodzey, ... Infrared Physics & Technology 69, 211-217, 2015 | 2 | 2015 |
| Band gap engineering of pseudomorphic GeSiSn alloys on Ge for photonic applications N Fernando, S Zollner, R Hickey, J Hart, R Hazbun, D Zhang, J Kolodzey Bulletin of the American Physical Society 61, 2016 | | 2016 |
| Band structure and optical properties of pseudomorphic Ge1−x−ySixSnyon Ge NS Fernando, R Hickey, J Hart, R Hazbun, D Zhang, J Kolodzey, ... 2016 IEEE Photonics Society Summer Topical Meeting Series (SUM), 98-99, 2016 | | 2016 |
| Near infrared group IV optoelectronics and novel pre-cursors for CVD epitaxy RM Hazbun University of Delaware, 2016 | | 2016 |
| Strain dependence of the band structure and critical points of pseudomorphic Ge Sn alloys on Ge N Fernando, J Moya, S Zollner, J Hart, D Zhang, R Hickey, R Hazbun, ... Bulletin of the American Physical Society 60, 2015 | | 2015 |
| Publisher's Note: In situ tunable factor for a single electron confined inside an InAs quantum dot molecule [Phys. Rev. B 84, 121304(R) (2011)] W Liu, S Sanwlani, R Hazbun, J Kolodzey, AS Bracker, D Gammon, ... Physical Review B 84 (15), 159906, 2011 | | 2011 |
| Compositional dependence of the optical properties of pseudomorphic Ge1-xy SixSny on Ge NS Fernando, J Hart, D Zhang, R Hickey, R Hazbun, J Kolodzey, ... | | |
James KolodzeyUniversity of DelawareVerified email at udel.edu
