| Method for fabricating a semiconductor structure including a metal oxide interface with silicon J Ramdani, R Droopad, Z Yu US Patent 6,709,989, 2004 | 610 | 2004 |
| Field effect transistors with gate dielectric on Si K Eisenbeiser, JM Finder, Z Yu, J Ramdani, JA Curless, JA Hallmark, ... Applied Physics Letters 76 (10), 1324-1326, 2000 | 447 | 2000 |
| Textile fabric with integrated sensing device and clothing fabricated thereof MS Lebby, KE Jachimowicz, J Ramdani US Patent 6,080,690, 2000 | 294 | 2000 |
| Band discontinuities at epitaxial heterojunctions SA Chambers, Y Liang, Z Yu, R Droopad, J Ramdani, K Eisenbeiser Applied Physics Letters 77 (11), 1662-1664, 2000 | 270 | 2000 |
| Low OHMIC contacts containing germanium for gallium nitride or other nitride-based power devices J Ramdani US Patent App. 12/927,948, 2011 | 245 | 2011 |
| Epitaxial oxide thin films on Si (001) Z Yu, J Ramdani, JA Curless, CD Overgaard, JM Finder, R Droopad, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000 | 196 | 2000 |
| Method of growing gallium nitride on a spinel substrate J Ramdani, MS Lebby, PM Holm US Patent 5,741,724, 1998 | 172 | 1998 |
| Semiconductor structure Z Yu, J Ramdani, R Droopad US Patent 6,501,121, 2002 | 165 | 2002 |
| Electro-optic structure and process for fabricating same J Ramdani, L Hilt, R Droopad, WJ Ooms US Patent 6,493,497, 2002 | 160 | 2002 |
| Band offset and structure of heterojunctions SA Chambers, Y Liang, Z Yu, R Droopad, J Ramdani Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 19 (3 …, 2001 | 158 | 2001 |
| Optical properties of bulk and thin-film on Si and Pt S Zollner, AA Demkov, R Liu, PL Fejes, RB Gregory, P Alluri, JA Curless, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000 | 153 | 2000 |
| Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same J Ramdani, R Droopad, LL Hilt, KW Eisenbeiser US Patent 6,392,257, 2002 | 138* | 2002 |
| Structure and method for fabricating semiconductor structures and devices not lattice matched to the substrate K Eisenbeiser, J Ramdani US Patent App. 09/911,490, 2002 | 134 | 2002 |
| Method for fabricating a semiconductor structure having a stable crystalline interface with silicon Z Yu, J Wang, R Droopad, J Ramdani US Patent 6,291,319, 2001 | 116 | 2001 |
| High-performance carbon nanotube transistors on substrates BM Kim, T Brintlinger, E Cobas, MS Fuhrer, H Zheng, Z Yu, R Droopad, ... Applied Physics Letters 84 (11), 1946-1948, 2004 | 112 | 2004 |
| Epitaxial perovskite thin films grown on silicon by molecular beam epitaxy Z Yu, J Ramdani, JA Curless, JM Finder, CD Overgaard, R Droopad, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000 | 94 | 2000 |
| Method of fabricating a semiconductor structure including a metal oxide interface J Ramdani, R Droopad, Z Yu US Patent 6,319,730, 2001 | 75 | 2001 |
| Long wavelength light emitting vertical cavity surface emitting laser and method of fabrication J Ramdani, MS Lebby, W Jiang US Patent 5,835,521, 1998 | 69 | 1998 |
| Development of high dielectric constant epitaxial oxides on silicon by molecular beam epitaxy R Droopad, Z Yu, J Ramdani, L Hilt, J Curless, C Overgaard, ... Materials Science and Engineering: B 87 (3), 292-296, 2001 | 67 | 2001 |
| Apparatus for fabricating semiconductor structures and method of forming the structures R Droopad, Z Yu, W Ooms, J Ramdani US Patent App. 09/780,119, 2001 | 66 | 2001 |
