| Lanthanum-substituted bismuth titanate for use in non-volatile memories BH Park, BS Kang, SD Bu, TW Noh, J Lee, W Jo Nature 401 (6754), 682-684, 1999 | 2704 | 1999 |
| Reproducible resistance switching in polycrystalline NiO films S Seo, MJ Lee, DH Seo, EJ Jeoung, DS Suh, YS Joung, IK Yoo, ... Applied Physics Letters 85 (23), 5655-5657, 2004 | 1203 | 2004 |
| Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory MJ Lee, S Han, SH Jeon, BH Park, BS Kang, SE Ahn, KH Kim, CB Lee, ... Nano letters 9 (4), 1476-1481, 2009 | 500 | 2009 |
| Two series oxide resistors applicable to high speed and high density nonvolatile memory MJ Lee, Y Park, DS Suh, EH Lee, S Seo, DC Kim, R Jung, BS Kang, ... Advanced Materials 19 (22), 3919-3923, 2007 | 494 | 2007 |
| Interference effect on Raman spectrum of graphene on D Yoon, H Moon, YW Son, JS Choi, BH Park, YH Cha, YD Kim, H Cheong Physical Review B—Condensed Matter and Materials Physics 80 (12), 125422, 2009 | 395 | 2009 |
| Synthesis of highly crystalline and monodisperse cobalt ferrite nanocrystals T Hyeon, Y Chung, J Park, SS Lee, YW Kim, BH Park The Journal of Physical Chemistry B 106 (27), 6831-6833, 2002 | 382 | 2002 |
| Friction anisotropy–driven domain imaging on exfoliated monolayer graphene JS Choi, JS Kim, IS Byun, DH Lee, MJ Lee, BH Park, C Lee, D Yoon, ... Science 333 (6042), 607-610, 2011 | 364 | 2011 |
| Resistive switching multistate nonvolatile memory effects in a single cobalt oxide nanowire K Nagashima, T Yanagida, K Oka, M Taniguchi, T Kawai, JS Kim, BH Park Nano letters 10 (4), 1359-1363, 2010 | 288 | 2010 |
| Variations in the Raman spectrum as a function of the number of graphene layers D Yoon, H Moon, H Cheong, JS Choi, JA Choi, BH Park J. Korean Phys. Soc 55 (3), 1299-1303, 2009 | 277 | 2009 |
| A low‐temperature‐grown oxide diode as a new switch element for high‐density, nonvolatile memories MJ Lee, S Seo, DC Kim, SE Ahn, DH Seo, IK Yoo, IG Baek, DS Kim, ... Advanced Materials 19 (1), 73-76, 2007 | 277 | 2007 |
| Differences in nature of defects between SrBi2Ta2O9 and Bi4Ti3O12 BH Park, SJ Hyun, SD Bu, TW Noh, J Lee, HD Kim, TH Kim, W Jo Applied Physics Letters 74 (13), 1907-1909, 1999 | 272 | 1999 |
| Conductivity switching characteristics and reset currents in NiO films S Seo, MJ Lee, DH Seo, SK Choi, DS Suh, YS Joung, IK Yoo, IS Byun, ... Applied Physics Letters 86 (9), 2005 | 260 | 2005 |
| Large Resistive Switching in Ferroelectric BiFeO3 Nano‐Island Based Switchable Diodes S Hong, T Choi, JH Jeon, Y Kim, H Lee, HY Joo, I Hwang, JS Kim, ... Advanced Materials 16 (25), 2339-2343, 2013 | 238 | 2013 |
| Microstructure and dielectric properties of films grown on substrates Y Gim, T Hudson, Y Fan, C Kwon, AT Findikoglu, BJ Gibbons, BH Park, ... Applied Physics Letters 77 (8), 1200-1202, 2000 | 214 | 2000 |
| Effects of very thin strain layers on dielectric properties of epitaxial films BH Park, EJ Peterson, QX Jia, J Lee, X Zeng, W Si, XX Xi Applied Physics Letters 78 (4), 533-535, 2001 | 203 | 2001 |
| Write current reduction in transition metal oxide based resistance-change memory SE Ahn, MJ Lee, Y Park, BS Kang, CB Lee, KH Kim, S Seo, DS Suh, ... Advanced materials 20 (5), 924-928, 2008 | 194 | 2008 |
| Nanoscale lithography on monolayer graphene using hydrogenation and oxidation IS Byun, D Yoon, JS Choi, I Hwang, DH Lee, MJ Lee, T Kawai, YW Son, ... ACS nano 5 (8), 6417-6424, 2011 | 183 | 2011 |
| Electrode dependence of resistance switching in polycrystalline NiO films S Seo, MJ Lee, DC Kim, SE Ahn, BH Park, YS Kim, IK Yoo, IS Byun, ... Applied Physics Letters 87 (26), 2005 | 156 | 2005 |
| Nanotribological properties of fluorinated, hydrogenated, and oxidized graphenes JH Ko, S Kwon, IS Byun, JS Choi, BH Park, YH Kim, JY Park Tribology Letters 50, 137-144, 2013 | 155 | 2013 |
| High nonlinearity of films heteroepitaxially grown on MgO substrates BH Park, Y Gim, Y Fan, QX Jia, P Lu Applied Physics Letters 77 (16), 2587-2589, 2000 | 151 | 2000 |
