Comparison of dual-stack dielectric field plates on β-Ga2O3 Schottky rectifiers PH Carey, J Yang, F Ren, R Sharma, M Law, SJ Pearton ECS Journal of Solid State Science and Technology 8 (7), Q3221, 2019 | 45 | 2019 |
Effect of probe geometry during measurement of> 100 A Ga2O3 vertical rectifiers R Sharma, M Xian, C Fares, ME Law, M Tadjer, KD Hobart, F Ren, ... Journal of Vacuum Science & Technology A 39 (1), 2021 | 44 | 2021 |
Thermal simulations of high current β-Ga2O3 Schottky rectifiers R Sharma, E Patrick, ME Law, J Yang, F Ren, SJ Pearton ECS Journal of Solid State Science and Technology 8 (7), Q3195, 2019 | 40 | 2019 |
Damage recovery and dopant diffusion in Si and Sn ion implanted β-Ga2O3 MJ Tadjer, C Fares, NA Mahadik, JA Freitas, D Smith, R Sharma, ME Law, ... ECS Journal of Solid State Science and Technology 8 (7), Q3133, 2019 | 36 | 2019 |
Effects of fluorine incorporation into β-Ga2O3 J Yang, C Fares, F Ren, R Sharma, E Patrick, ME Law, SJ Pearton, ... Journal of Applied Physics 123 (16), 2018 | 35 | 2018 |
The role of annealing ambient on diffusion of implanted Si in β-Ga2O3 R Sharma, ME Law, C Fares, M Tadjer, F Ren, A Kuramata, SJ Pearton AIP Advances 9 (8), 2019 | 32 | 2019 |
Diffusion of dopants and impurities in β-Ga2O3 R Sharma, ME Law, F Ren, AY Polyakov, SJ Pearton Journal of Vacuum Science & Technology A 39 (6), 2021 | 29 | 2021 |
Diffusion of implanted Ge and Sn in β-Ga2O3 R Sharma, ME Law, M Xian, M Tadjer, EA Anber, D Foley, AC Lang, ... Journal of Vacuum Science & Technology B 37 (5), 2019 | 25 | 2019 |
Optimization of edge termination techniques for β-Ga2O3 Schottky rectifiers R Sharma, EE Patrick, ME Law, F Ren, SJ Pearton ECS Journal of Solid State Science and Technology 8 (12), Q234, 2019 | 22 | 2019 |
Extraction of migration energies and role of implant damage on thermal stability of deuterium in Ga2O3 R Sharma, E Patrick, ME Law, S Ahn, F Ren, SJ Pearton, A Kuramata ECS Journal of Solid State Science and Technology 6 (12), P794, 2017 | 16 | 2017 |
Radiation damage in the ultra-wide bandgap semiconductor Ga2O3 X Xia, JS Li, R Sharma, F Ren, MAJ Rasel, S Stepanoff, N Al-Mamun, ... ECS Journal of Solid State Science and Technology 11 (9), 095001, 2022 | 15 | 2022 |
Nitrogen ion-implanted resistive regions for edge termination of vertical Ga2O3 rectifiers X Xia, M Xian, C Fares, R Sharma, ME Law, F Ren, SJ Pearton Journal of Vacuum Science & Technology A 39 (6), 2021 | 11 | 2021 |
Design and implementation of floating field ring edge termination on vertical geometry β-Ga2O3 rectifiers R Sharma, M Xian, ME Law, M Tadjer, F Ren, SJ Pearton Journal of Vacuum Science & Technology A 38 (6), 2020 | 10 | 2020 |
AIP Adv. 9, 085111 (2019) R Sharma, ME Law, C Fares, M Tadjer, F Ren, A Kuramata, SJ Pearton | 8 | |
Effect of biased field rings to improve charge removal after heavy-ion strikes in vertical geometry β-Ga2O3 rectifiers R Sharma, JS Li, ME Law, F Ren, SJ Pearton ECS Journal of Solid State Science and Technology 12 (3), 035003, 2023 | 2 | 2023 |
Electro-Thermal Analysis and Edge Termination Techniques of High Current β-Ga2 O3 Schottky Rectifiers R Sharma, E Patlick, J Yang, F Ren, M Law, S Pearton 2019 International Conference on Simulation of Semiconductor Processes and …, 2019 | 2 | 2019 |
Comparison of high voltage, vertical geometry Ga2O3 rectifiers with GaN and SiC J Yang, C Fares, PH Carey, M Xian, F Ren, MJ Tadjer, YT Chen, YT Liao, ... ECS Transactions 92 (7), 15, 2019 | 2 | 2019 |
Thermal effects in Ga2O3 rectifiers and MOSFETs borrowing from GaN M Xian, F Ren, MJ Tadjer, R Sharma, ME Law, PE Raad, PL Komarov, ... Thermal Management of Gallium Nitride Electronics, 441-467, 2022 | | 2022 |
High-voltage high-current vertical geometry Ga2O3 rectifiers M Xian, C Fares, P Carey IV, F Ren, M Tadjer, YT Liao, CW Chang, J Lin, ... Oxide-based Materials and Devices XI 11281, 11-21, 2020 | | 2020 |
An Investigative Study of Dopant Diffusion in Gallium Oxide and Design Optimization of β-Ga2O3 Schottky Rectifiers R Sharma University of Florida, 2020 | | 2020 |