| Direct-gap photoluminescence with tunable emission wavelength in Ge 1− y Sn y alloys on silicon J Mathews, RT Beeler, J Tolle, C Xu, R Roucka, J Kouvetakis, ... Appl. Phys. Lett 97, 221912, 2010 | 224 | 2010 |
| Next generation of Ge1− ySny (y= 0.01-0.09) alloys grown on Si (100) via Ge3H8 and SnD4: Reaction kinetics and tunable emission G Grzybowski, RT Beeler, L Jiang, DJ Smith, J Kouvetakis, J Menendez Applied Physics Letters 101 (7), 072105, 2012 | 131 | 2012 |
| Direct gap electroluminescence from Si/Ge1− ySnyp-in heterostructure diodes R Roucka, J Mathews, RT Beeler, J Tolle, J Kouvetakis, J Menéndez Applied Physics Letters 98 (6), 061109, 2011 | 130 | 2011 |
| High-performance near-IR photodiodes: A novel chemistry-based approach to Ge and Ge–Sn devices integrated on silicon R Roucka, J Mathews, C Weng, R Beeler, J Tolle, J Menendez, ... IEEE Journal of Quantum Electronics 47 (2), 213-222, 2011 | 106 | 2011 |
| Direct versus indirect optical recombination in Ge films grown on Si substrates G Grzybowski, R Roucka, J Mathews, L Jiang, RT Beeler, J Kouvetakis, ... Physical Review B 84 (20), 205307, 2011 | 93 | 2011 |
| Direct versus indirect optical recombination in Ge films grown on Si substrates G Grzybowski, R Roucka, J Mathews, L Jiang, RT Beeler, J Kouvetakis, ... Physical Review B 84 (20), 205307, 2011 | 93 | 2011 |
| Nonlinear structure-composition relationships in the Ge 1− y Sn y/Si (100)(y< 0.15) system R Beeler, R Roucka, AVG Chizmeshya, J Kouvetakis, J Menéndez Physical Review B 84 (3), 035204, 2011 | 88 | 2011 |
| Temperature-dependent photoluminescence of Ge/Si and Ge1-ySny/Si, indicating possible indirect-to-direct bandgap transition at lower Sn content MY Ryu, TR Harris, YK Yeo, RT Beeler, J Kouvetakis Applied Physics Letters 102 (17), 171908, 2013 | 82 | 2013 |
| Complementary metal-oxide semiconductor-compatible detector materials with enhanced 1550 nm responsivity via Sn-doping of Ge/Si (100) R Roucka, R Beeler, J Mathews, MY Ryu, YK Yeo, J Menéndez, ... Journal of Applied Physics 109 (10), 103115, 2011 | 56 | 2011 |
| Compositional dependence of the absorption edge and dark currents in Ge1− x− ySixSny/Ge (100) photodetectors grown via ultra-low-temperature epitaxy of Ge4H10, Si4H10, and SnD4 RT Beeler, C Xu, DJ Smith, G Grzybowski, J Menendez, J Kouvetakis Applied Physics Letters 101 (22), 221111, 2012 | 51 | 2012 |
| Photoluminescence from heavily doped GeSn: P materials grown on Si (100) G Grzybowski, L Jiang, J Mathews, R Roucka, C Xu, RT Beeler, ... Applied Physics Letters 99 (17), 171910, 2011 | 51 | 2011 |
| Ultra-Low-Temperature Epitaxy of Ge-based Semiconductors and Optoelectronic Structures on Si (100): Introducing Higher Order Germanes (Ge3H8, Ge4H10) G Grzybowski, L Jiang, RT Beeler, T Watkins, AVG Chizmeshya, C Xu, ... Chemistry of Materials 24 (9), 1619-1628, 2012 | 50 | 2012 |
| New strategies for Ge-on-Si materials and devices using non-conventional hydride chemistries: the tetragermane case C Xu, RT Beeler, L Jiang, G Grzybowski, AVG Chizmeshya, J Menéndez, ... Semiconductor Science and Technology 28 (10), 105001, 2013 | 44 | 2013 |
| GeSiSn photodiodes with 1 eV optical gaps grown on Si (100) and Ge (100) platforms RT Beeler, DJ Smith, J Kouvetakis, J Menéndez IEEE Journal of Photovoltaics 2 (4), 434-440, 2012 | 42 | 2012 |
| Comparative study of InGaAs integration on bulk Ge and virtual Ge/Si (100) substrates for low-cost photovoltaic applications R Beeler, J Mathews, C Weng, J Tolle, R Roucka, AVG Chizmeshya, ... Solar Energy Materials and Solar Cells 94 (12), 2362-2370, 2010 | 41 | 2010 |
| Nanosynthesis Routes to New Tetrahedral Crystalline Solids: Silicon-like Si3AlP T Watkins, AVG Chizmeshya, L Jiang, DJ Smith, RT Beeler, G Grzybowski, ... Journal of the American Chemical Society 133 (40), 16212-16218, 2011 | 39 | 2011 |
| Molecular Synthesis of High-Performance Near-IR Photodetectors with Independently Tunable Structural and Optical Properties Based on Si–Ge–Sn C Xu, RT Beeler, GJ Grzybowski, AVG Chizmeshya, DJ Smith, ... Journal of the American Chemical Society 134 (51), 20756-20767, 2012 | 38 | 2012 |
| Synthesis and optical properties of Sn-rich Ge 1–x–y Si x Sn y materials and devices C Xu, RT Beeler, L Jiang, JD Gallagher, R Favaro, J Menéndez, ... Thin Solid Films 557, 177-182, 2014 | 33 | 2014 |
| Observation of heavy-and light-hole split direct bandgap photoluminescence from tensile-strained GeSn (0.03% Sn) TR Harris, YK Yeo, MY Ryu, RT Beeler, J Kouvetakis Journal of Applied Physics 116 (10), 103502, 2014 | 29 | 2014 |
| Band Gap-Engineered Group-IV Optoelectronic Semiconductors, Photodiodes and Prototype Photovoltaic Devices RT Beeler, J Gallagher, C Xu, L Jiang, CL Senaratne, DJ Smith, ... ECS Journal of Solid State Science and Technology 2 (9), Q172-Q177, 2013 | 24 | 2013 |
