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Deyi Fu
Deyi Fu
Department of Physics, Xiamen University
Verified email at xmu.edu.cn
Title
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Cited by
Year
Doping against the Native Propensity of MoS2: Degenerate Hole Doping by Cation Substitution
J Suh, TE Park, DY Lin, D Fu, J Park, HJ Jung, Y Chen, C Ko, C Jang, ...
Nano letters 14 (12), 6976-6982, 2014
7502014
Elastic Properties of Chemical-Vapor-Deposited Monolayer MoS2, WS2, and Their Bilayer Heterostructures
K Liu, Q Yan, M Chen, W Fan, Y Sun, J Suh, D Fu, S Lee, J Zhou, ...
Nano letters 14 (9), 5097-5103, 2014
6782014
Efficient photovoltaic current generation at ferroelectric domain walls
J Seidel, D Fu, SY Yang, E Alarcón-Lladó, J Wu, R Ramesh, JW Ager III
Physical review letters 107 (12), 126805, 2011
4442011
Chemical Vapor Deposition of Large-Size Monolayer MoSe2 Crystals on Molten Glass
J Chen, X Zhao, SJR Tan, H Xu, B Wu, B Liu, D Fu, W Fu, D Geng, Y Liu, ...
Journal of the American Chemical Society 139 (3), 1073-1076, 2017
3282017
Molecular beam epitaxy of highly crystalline monolayer molybdenum disulfide on hexagonal boron nitride
D Fu, X Zhao, YY Zhang, L Li, H Xu, AR Jang, SI Yoon, P Song, SM Poh, ...
Journal of the American Chemical Society 139 (27), 9392-9400, 2017
2382017
Comprehensive study of the metal-insulator transition in pulsed laser deposited epitaxial VO2 thin films
D Fu, K Liu, T Tao, K Lo, C Cheng, B Liu, R Zhang, HA Bechtel, J Wu
Journal of Applied Physics 113 (4), 2013
1982013
Ferroelectrically gated atomically thin transition-metal dichalcogenides as nonvolatile memory
C Ko, Y Lee, Y Chen, J Suh, D Fu, A Suslu, S Lee, JD Clarkson, HS Choe, ...
Adv. Mater 28 (15), 2923-2930, 2016
1642016
Achieving Ultrafast Hole Transfer at the Monolayer MoS2 and CH3NH3PbI3 Perovskite Interface by Defect Engineering
B Peng, G Yu, Y Zhao, Q Xu, G Xing, X Liu, D Fu, B Liu, JRS Tan, W Tang, ...
ACS nano 10 (6), 6383-6391, 2016
1472016
Mo-terminated edge reconstructions in nanoporous molybdenum disulfide film
X Zhao, D Fu, Z Ding, YY Zhang, D Wan, SJR Tan, Z Chen, K Leng, J Dan, ...
Nano letters 18 (1), 482-490, 2018
1302018
Simultaneous Enhancement of Electrical Conductivity and Thermopower of Bi2Te3 by Multifunctionality of Native Defects
J Suh, KM Yu, D Fu, X Liu, F Yang, J Fan, DJ Smith, YH Zhang, ...
Advanced materials 27 (24), 3681-3686, 2015
1202015
Signals for specular Andreev reflection
Q Zhang, D Fu, B Wang, R Zhang, DY Xing
Physical review letters 101 (4), 047005, 2008
1192008
MoS2 Heterojunctions by Thickness Modulation
JWAJ Mahmut Tosun, Deyi Fu, Sujay B. Desai, Changhyun Ko, Jeong Seuk Kang ...
Scientific Reports 5, 10990, 2015
1182015
Intensity tunable infrared broadband absorbers based on VO2 phase transition using planar layered thin films
H Kocer, S Butun, E Palacios, Z Liu, S Tongay, D Fu, K Wang, J Wu, ...
Scientific reports 5 (1), 13384, 2015
1142015
Powerful, multifunctional torsional micromuscles activated by phase transition
K Liu, C Cheng, J Suh, R Tang-Kong, D Fu, S Lee, J Zhou, LO Chua, J Wu
Adv. Mater 26 (11), 1746-1750, 2014
1012014
Molecular Beam Epitaxy of Highly Crystalline MoSe2 on Hexagonal Boron Nitride
SM Poh, X Zhao, SJR Tan, D Fu, W Fei, L Chu, D Jiadong, W Zhou, ...
ACS nano 12 (8), 7562-7570, 2018
932018
Gate-dependent pseudospin mixing in graphene/boron nitride moiré superlattices
Z Shi, C Jin, W Yang, L Ju, J Horng, X Lu, HA Bechtel, MC Martin, D Fu, ...
Nature Physics 10 (10), 743-747, 2014
892014
Self-Assembly and Horizontal Orientation Growth of VO2 Nanowires
C Cheng, H Guo, A Amini, K Liu, D Fu, J Zou, H Song
Scientific Reports 4 (1), 5456, 2014
772014
Large area synthesis of 1D-MoSe2 using molecular beam epitaxy
SM Poh, SJR Tan, X Zhao, Z Chen, I Abdelwahab, D Fu, H Xu, Y Bao, ...
Adv. Mater 29 (12), 1605641, 2017
712017
Dense electron system from gate-controlled surface metal–insulator transition
K Liu, D Fu, J Cao, J Suh, KX Wang, C Cheng, DF Ogletree, H Guo, ...
Nano letters 12 (12), 6272-6277, 2012
712012
Electrothermal dynamics of semiconductor nanowires under local carrier modulation
D Fu, J Zou, K Wang, R Zhang, D Yu, J Wu
Nano letters 11 (9), 3809-3815, 2011
662011
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