Jia Guo
Jia Guo
Wolfspeed - A Cree Company
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InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts andof 370 GHz
Y Yue, Z Hu, J Guo, B Sensale-Rodriguez, G Li, R Wang, F Faria, T Fang, ...
IEEE Electron Device Letters 33 (7), 988-990, 2012
MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05
J Guo, G Li, F Faria, Y Cao, R Wang, J Verma, X Gao, S Guo, E Beam, ...
IEEE Electron device letters 33 (4), 525-527, 2012
Ultrascaled InAlN/GaN high electron mobility transistors with cutoff frequency of 400 GHz
Y Yue, Z Hu, J Guo, B Sensale-Rodriguez, G Li, R Wang, F Faria, B Song, ...
Japanese Journal of Applied Physics 52 (8S), 08JN14, 2013
On the impact of carbon-doping on the dynamic Ron and off-state leakage current of 650V GaN power devices
P Moens, P Vanmeerbeek, A Banerjee, J Guo, C Liu, P Coppens, A Salih, ...
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's…, 2015
Stress-tolerant feedstocks for sustainable bioenergy production on marginal land
LD Quinn, KC Straker, J Guo, S Kim, S Thapa, G Kling, DK Lee, TB Voigt
BioEnergy Research 8, 1081-1100, 2015
Stripe rust effector PstGSRE1 disrupts nuclear localization of ROS-promoting transcription factor TaLOL2 to defeat ROS-induced defense in wheat
T Qi, J Guo, P Liu, F He, C Wan, MA Islam, BM Tyler, Z Kang, J Guo
Molecular Plant 12 (12), 1624-1638, 2019
220-GHz quaternary barrier InAlGaN/AlN/GaN HEMTs
R Wang, G Li, J Verma, B Sensale-Rodriguez, T Fang, J Guo, Z Hu, ...
IEEE Electron device letters 32 (9), 1215-1217, 2011
Polarization-induced GaN-on-insulator E/D mode p-channel heterostructure FETs
G Li, R Wang, B Song, J Verma, Y Cao, S Ganguly, A Verma, J Guo, ...
IEEE electron device letters 34 (7), 852-854, 2013
Quaternary Barrier InAlGaN HEMTs With ft/fmax of 230/300 GHz
R Wang, G Li, G Karbasian, J Guo, B Song, Y Yue, Z Hu, O Laboutin, ...
IEEE Electron Device Letters, 34 (3), 2013
Ultra-low resistance ohmic contacts to GaN with high Si doping concentrations grown by molecular beam epitaxy
F Afroz Faria, J Guo, P Zhao, G Li, P Kumar Kandaswamy, M Wistey, ...
Applied Physics Letters 101 (3), 2012
Atmospheric peroxides in a polluted subtropical environment: seasonal variation, sources and sinks, and importance of heterogeneous processes
J Guo, A Tilgner, C Yeung, Z Wang, PKK Louie, CWY Luk, Z Xu, C Yuan, ...
Environmental science & technology 48 (3), 1443-1450, 2014
High-voltage electrochemical performance of LiNi0. 5Co0. 2Mn0. 3O2 cathode material via the synergetic modification of the Zr/Ti elements
Y Chen, Y Li, W Li, G Cao, S Tang, Q Su, S Deng, J Guo
Electrochimica Acta 281, 48-59, 2018
Nitrogen Fertilization Effects on Biomass Production and Yield Components of Miscanthus giganteus
MS Lee, A Wycislo, J Guo, DK Lee, T Voigt
Frontiers in plant science 8, 544, 2017
InGaN channel high-electron-mobility transistors with InAlGaN barrier and fT/fmax of 260/220 GHz
R Wang, G Li, G Karbasian, J Guo, F Faria, Z Hu, Y Yue, J Verma, ...
Applied Physics Express 6 (1), 016503, 2012
Ultrathin body GaN-on-insulator quantum well FETs with regrown ohmic contacts
G Li, R Wang, J Guo, J Verma, Z Hu, Y Yue, F Faria, Y Cao, M Kelly, ...
IEEE electron device letters 33 (5), 661-663, 2012
On designing PMI Kalman filter for INS/GPS integrated systems with unknown sensor errors
M Zhong, J Guo, Q Cao
IEEE Sensors Journal 15 (1), 535-544, 2014
Metal‐face InAlN/AlN/GaN high electron mobility transistors with regrown ohmic contacts by molecular beam epitaxy
J Guo, Y Cao, C Lian, T Zimmermann, G Li, J Verma, X Gao, S Guo, ...
physica status solidi (a) 208 (7), 1617-1619, 2011
Lithium-ion battery operation, degradation, and aging mechanism in electric vehicles: an overview
J Guo, Y Li, K Pedersen, DI Stroe
Energies 14 (17), 5220, 2021
Effect of Fringing Capacitances on the RF Performance of GaN HEMTs With T-Gates
B Song, B Sensale, R Wang, J Guo, Z Hu, Y Yue, F Faria, M Schuette, ...
IEEE Transactions on Electron Devices 61 (3), 747-754, 2014
Calibration and compensation of the scale factor errors in DTG POS
J Guo, M Zhong
IEEE Transactions on Instrumentation and Measurement 62 (10), 2784-2794, 2013
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