| InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts andof 370 GHz Y Yue, Z Hu, J Guo, B Sensale-Rodriguez, G Li, R Wang, F Faria, T Fang, ... IEEE Electron Device Letters 33 (7), 988-990, 2012 | 417 | 2012 |
| MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 J Guo, G Li, F Faria, Y Cao, R Wang, J Verma, X Gao, S Guo, E Beam, ... IEEE Electron device letters 33 (4), 525-527, 2012 | 175 | 2012 |
| Ultrascaled InAlN/GaN high electron mobility transistors with cutoff frequency of 400 GHz Y Yue, Z Hu, J Guo, B Sensale-Rodriguez, G Li, R Wang, F Faria, B Song, ... Japanese Journal of Applied Physics 52 (8S), 08JN14, 2013 | 127 | 2013 |
| On the impact of carbon-doping on the dynamic Ron and off-state leakage current of 650V GaN power devices P Moens, P Vanmeerbeek, A Banerjee, J Guo, C Liu, P Coppens, A Salih, ... 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's …, 2015 | 124 | 2015 |
| Stripe rust effector PstGSRE1 disrupts nuclear localization of ROS-promoting transcription factor TaLOL2 to defeat ROS-induced defense in wheat T Qi, J Guo, P Liu, F He, C Wan, MA Islam, BM Tyler, Z Kang, J Guo Molecular plant 12 (12), 1624-1638, 2019 | 111 | 2019 |
| Stress-tolerant feedstocks for sustainable bioenergy production on marginal land LD Quinn, KC Straker, J Guo, S Kim, S Thapa, G Kling, DK Lee, TB Voigt BioEnergy Research 8, 1081-1100, 2015 | 100 | 2015 |
| 220-GHz quaternary barrier InAlGaN/AlN/GaN HEMTs R Wang, G Li, J Verma, B Sensale-Rodriguez, T Fang, J Guo, Z Hu, ... IEEE Electron device letters 32 (9), 1215-1217, 2011 | 95 | 2011 |
| Health prognostics for lithium-ion batteries: mechanisms, methods, and prospects Y Che, X Hu, X Lin, J Guo, R Teodorescu Energy & Environmental Science 16 (2), 338-371, 2023 | 82 | 2023 |
| Polarization-induced GaN-on-insulator E/D mode p-channel heterostructure FETs G Li, R Wang, B Song, J Verma, Y Cao, S Ganguly, A Verma, J Guo, ... IEEE electron device letters 34 (7), 852-854, 2013 | 78 | 2013 |
| Quaternary Barrier InAlGaN HEMTs With ft/fmax of 230/300 GHz R Wang, G Li, G Karbasian, J Guo, B Song, Y Yue, Z Hu, O Laboutin, ... IEEE Electron Device Letters, 34 (3), 2013 | 78 | 2013 |
| Nitrogen Fertilization Effects on Biomass Production and Yield Components of Miscanthus ×giganteus MS Lee, A Wycislo, J Guo, DK Lee, T Voigt Frontiers in plant science 8, 544, 2017 | 66 | 2017 |
| Ultra-low resistance ohmic contacts to GaN with high Si doping concentrations grown by molecular beam epitaxy F Afroz Faria, J Guo, P Zhao, G Li, P Kumar Kandaswamy, M Wistey, ... Applied Physics Letters 101 (3), 2012 | 64 | 2012 |
| Atmospheric peroxides in a polluted subtropical environment: seasonal variation, sources and sinks, and importance of heterogeneous processes J Guo, A Tilgner, C Yeung, Z Wang, PKK Louie, CWY Luk, Z Xu, C Yuan, ... Environmental science & technology 48 (3), 1443-1450, 2014 | 62 | 2014 |
| High-voltage electrochemical performance of LiNi0. 5Co0. 2Mn0. 3O2 cathode material via the synergetic modification of the Zr/Ti elements Y Chen, Y Li, W Li, G Cao, S Tang, Q Su, S Deng, J Guo Electrochimica Acta 281, 48-59, 2018 | 61 | 2018 |
| Understanding the mechanism of capacity increase during early cycling of commercial NMC/graphite lithium-ion batteries J Guo, Y Li, J Meng, K Pedersen, L Gurevich, DI Stroe Journal of Energy Chemistry 74, 34-44, 2022 | 57 | 2022 |
| Lithium-ion battery operation, degradation, and aging mechanism in electric vehicles: An overview J Guo, Y Li, K Pedersen, DI Stroe Energies 14 (17), 5220, 2021 | 55 | 2021 |
| Ultrathin body GaN-on-insulator quantum well FETs with regrown ohmic contacts G Li, R Wang, J Guo, J Verma, Z Hu, Y Yue, F Faria, Y Cao, M Kelly, ... IEEE electron device letters 33 (5), 661-663, 2012 | 55 | 2012 |
| On designing PMI Kalman filter for INS/GPS integrated systems with unknown sensor errors M Zhong, J Guo, Q Cao IEEE Sensors Journal 15 (1), 535-544, 2014 | 53 | 2014 |
| A review of the life cycle carbon footprint of electric vehicle batteries P Li, X Xia, J Guo Separation and Purification Technology 296, 121389, 2022 | 52 | 2022 |
| InGaN channel high-electron-mobility transistors with InAlGaN barrier and fT/fmax of 260/220 GHz R Wang, G Li, G Karbasian, J Guo, F Faria, Z Hu, Y Yue, J Verma, ... Applied Physics Express 6 (1), 016503, 2012 | 52 | 2012 |
