| Impact of Bi Deficiencies on Ferroelectric Resistive Switching Characteristics Observed at p‐Type Schottky‐Like Pt/Bi1–δFeO3 Interfaces A Tsurumaki, H Yamada, A Sawa Advanced Functional Materials 22 (5), 1040-1047, 2012 | 213 | 2012 |
| Switching operation and degradation of resistive random access memory composed of tungsten oxide and copper investigated using in-situ TEM M Arita, A Takahashi, Y Ohno, A Nakane, A Tsurumaki-Fukuchi, ... Scientific reports 5 (1), 17103, 2015 | 77 | 2015 |
| Strong Surface‐Termination Effect on Electroresistance in Ferroelectric Tunnel Junctions H Yamada, A Tsurumaki‐Fukuchi, M Kobayashi, T Nagai, Y Toyosaki, ... Advanced Functional Materials 25 (18), 2708-2714, 2015 | 56 | 2015 |
| Resistive switching artificially induced in a dielectric/ferroelectric composite diode A Tsurumaki-Fukuchi, H Yamada, A Sawa Applied Physics Letters 103 (15), 2013 | 55 | 2013 |
| Probing electrochemistry at the nanoscale: in situ TEM and STM characterizations of conducting filaments in memristive devices Y Yang, Y Takahashi, A Tsurumaki-Fukuchi, M Arita, M Moors, M Buckwell, ... Journal of electroceramics 39, 73-93, 2017 | 34 | 2017 |
| Multilevel recording in Bi-deficient Pt/BFO/SRO heterostructures based on ferroelectric resistive switching targeting high-density information storage in nonvolatile memories D Jiménez, E Miranda, A Tsurumaki-Fukuchi, H Yamada, J Suñé, A Sawa Applied physics letters 103 (26), 2013 | 23 | 2013 |
| Smooth Interfacial Scavenging for Resistive Switching Oxide via the Formation of Highly Uniform Layers of Amorphous TaOx A Tsurumaki-Fukuchi, R Nakagawa, M Arita, Y Takahashi ACS applied materials & interfaces 10 (6), 5609-5617, 2018 | 21 | 2018 |
| Microstructural transitions in resistive random access memory composed of molybdenum oxide with copper during switching cycles M Arita, Y Ohno, Y Murakami, K Takamizawa, A Tsurumaki-Fukuchi, ... Nanoscale 8 (31), 14754-14766, 2016 | 21 | 2016 |
| Modeling of hysteretic Schottky diode-like conduction in Pt/BiFeO3/SrRuO3 switches E Miranda, D Jiménez, A Tsurumaki-Fukuchi, J Blasco, H Yamada, ... Applied physics letters 105 (8), 2014 | 15 | 2014 |
| Stable and Tunable Current-Induced Phase Transition in Epitaxial Thin Films of Ca2RuO4 A Tsurumaki-Fukuchi, K Tsubaki, T Katase, T Kamiya, M Arita, ... ACS applied materials & interfaces 12 (25), 28368-28374, 2020 | 14 | 2020 |
| Ca doping dependence of resistive switching characteristics in ferroelectric capacitors comprising Ca-doped BiFeO3 L Liu, A Tsurumaki-Fukuchi, H Yamada, A Sawa Journal of Applied Physics 118 (20), 2015 | 13 | 2015 |
| Fabrication and evaluation of series-triple quantum dots by thermal oxidation of silicon nanowire T Uchida, M Jo, A Tsurumaki-Fukuchi, M Arita, A Fujiwara, Y Takahashi AIP advances 5 (11), 2015 | 10 | 2015 |
| Periodic Coulomb blockade oscillations observed in single-layered Fe nanodot array T Gyakushi, Y Asai, A Tsurumaki-Fukuchi, M Arita, Y Takahashi Thin Solid Films 704, 138012, 2020 | 9 | 2020 |
| Observation of conductive filament in CBRAM at switching moment S Muto, R Yonesaka, A Tsurumaki-Fukuchi, M Arita, Y Takahashi ECS Transactions 80 (10), 895, 2017 | 8 | 2017 |
| Fabrication and single-electron-transfer operation of a triple-dot single-electron transistor M Jo, T Uchida, A Tsurumaki-Fukuchi, M Arita, A Fujiwara, Y Ono, ... Journal of Applied Physics 118 (21), 2015 | 8 | 2015 |
| Initial states and analog switching behaviors of two major tantalum oxide resistive memories Y Li, A Tsurumaki-Fukuchi, M Arita, T Morie, Y Takahashi Japanese Journal of Applied Physics 59 (4), 044004, 2020 | 6 | 2020 |
| Nanoscale filaments in Ta-O resistive RAM bit array: microscopy analysis and switching property M Arita, A Tsurumaki-Fukuchi, Y Takahashi, S Muraoka, S Ito, S Yoneda 2019 IEEE 11th International Memory Workshop (IMW), 1-4, 2019 | 6 | 2019 |
| Resistive switching characteristics in dielectric/ferroelectric composite devices improved by post-thermal annealing at relatively low temperature A Tsurumaki-Fukuchi, H Yamada, A Sawa Applied Physics Letters 104 (9), 2014 | 6 | 2014 |
| Resistive switching memory based on ferroelectric polarization reversal at Schottky-like BiFeO3 interfaces A Tsurumaki-Fukuchi, H Yamada, A Sawa MRS Online Proceedings Library (OPL) 1430, mrss12-1430-e04-04, 2012 | 6 | 2012 |
| Charge-offset stability of single-electron devices based on single-layered Fe nanodot array T Gyakushi, Y Asai, S Honjo, A Tsurumaki-Fukuchi, M Arita, Y Takahashi AIP Advances 11 (3), 2021 | 4 | 2021 |
